Thermoelectric Properties of Mg(Bi,Sb) under Finite Temperatures and Pressures: A First-Principles Study.

MgBiSb (0 ≤ v ≤ 2) is a class of promising thermoelectric materials that have a high thermoelectric performance around room temperatures, whereas their thermoelectric properties under pressures and temperatures are still illusive. In this study, we examined the influence of pressure, temperature, and carrier concentration on the thermoelectric properties of MgBiSb using first-principle calculations accompanied with Boltzmann transport equations method. There is a decrease in the lattice thermal conductivity of MgSb (i.e., v = 2) with increasing pressure. For a general MgBiSb system, power factors are more effectively improved by n-type doping where electrons are the primary carriers over holes in n-type doping, and can be further enhanced by applied pressure. The figure of merit () exhibits a positive correlation with temperature. A high value of 1.53 can be achieved by synergistically tuning the temperature, pressure, and carrier concentration in MgSb. This study offers valuable insights into the tailoring and optimization of the thermoelectric properties of MgBiSb.