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弱耦合超晶格中的反常温度效应:太赫兹量子级联激光器中的载流子输运

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser.

作者信息

Giparakis Miriam, Kainz Martin A, Ertl Marie C, Limbacher Benedikt, Jaidl Michael, Beiser Maximilian, Isceri Stefania, Detz Hermann, Schrenk Werner, Schwarz Benedikt, Strasser Gottfried, Bastard Gérald, Unterrainer Karl, Andrews Aaron M

机构信息

Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria.

Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.

出版信息

Phys Rev Lett. 2024 Jan 26;132(4):046302. doi: 10.1103/PhysRevLett.132.046302.

Abstract

We present an investigation into the vertical transport through 13 different superlattice structures, where the well and barrier widths, doping concentration, dopant position, and contact layers were varied. Although superlattices have been extensively studied since 1970, there is a lack of publications on transport through superlattices similarly low doped as THz quantum cascade lasers (QCLs), for which the doping is in the 3-5×10^{10}  cm^{-2} range. The superlattices presented are doped in the same range as THz QCLs, with contact layers and fabrication comparable to high-temperature THz QCLs. The temperature-dependent current-voltage characteristics were measured starting from 5 K and an anomalous temperature effect was observed at the first plateau. The measured current through the superlattice first decreases before increasing again with increasing temperature, resulting in the lowest current occurring at 75-110 K. This behavior is also observed in some THz QCLs. The effect disappears for thinner barriers, higher quantum well doping, or modified contact layers, indicating a strong dependency on band bending, due to the large difference in the doping of the contact layers and the superlattice, which is confirmed with multiscattering Büttiker simulations.

摘要

我们展示了对13种不同超晶格结构中垂直输运的研究,其中阱宽、势垒宽度、掺杂浓度、掺杂位置和接触层都有所变化。尽管自1970年以来超晶格已得到广泛研究,但对于与太赫兹量子级联激光器(QCL)掺杂浓度同样低的超晶格中的输运,缺乏相关出版物,太赫兹量子级联激光器的掺杂浓度在3 - 5×10¹⁰ cm⁻²范围内。所展示的超晶格的掺杂浓度与太赫兹量子级联激光器相同,其接触层和制造工艺与高温太赫兹量子级联激光器相当。从5 K开始测量温度依赖的电流 - 电压特性,并在第一个平台处观察到异常温度效应。通过超晶格的测量电流在随温度升高再次增加之前先减小,导致最低电流出现在75 - 110 K。这种行为在一些太赫兹量子级联激光器中也有观察到。对于更薄的势垒、更高的量子阱掺杂或改进的接触层,该效应消失,这表明其强烈依赖于能带弯曲,这是由于接触层和超晶格的掺杂存在巨大差异,多散射比蒂克模拟证实了这一点。

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