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卤化物阴离子对具有反高温对称性破缺的无铅钙钛矿型铁电半导体的调控

Halide Anions Tuning of Lead-Free Perovskite-Type Ferroelectric Semiconductors with Inverse High-Temperature Symmetry Breaking.

作者信息

Jiao Shulin, Sun Xiaofan, Zhao Min, Chen Peng, Tang Zheng, Li Dong, Zhou Zilong, Li Tingfeng, Zhang Wentao, Lu Yanzhou, Wu Yizhang, Ye Kongmeng, Xu Libo, You Qi, Cai Hong-Ling, Wu Xiaoshan

机构信息

Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures & School of Physics, Nanjing University, Nanjing, 210093, China.

Kingwills Advanced Materials Co., Ltd, Nantong, 226000, China.

出版信息

Small. 2024 Jul;20(29):e2310768. doi: 10.1002/smll.202310768. Epub 2024 Feb 11.

Abstract

There is a noticeable gap in the literature regarding research on halogen-substitution-regulated ferroelectric semiconductors featuring multiple phase transitions. Here, a new category of 1D perovskite ferroelectrics (DFP)SbX (DFP = 3,3-difluoropyrrolidium, X = I, Br, abbreviated as I-1 and Br-2) with twophase transitions (PTs) is reported. The first low-temperature PT is a mmmFmm2 ferroelectric PT, while the high-temperature PT is a counterintuitive inverse temperature symmetry-breaking PT. By the substitution of iodine with bromine, the Curie temperature (Tc) significantly increases from 348 K of I-1 to 374 K of Br-2. Their ferroelectricity and pyroelectricity are improved (Ps value from 1.3 to 4.0 µC cm, p value from 0.2 to 0.48 µC cm K for I-1 and Br-2), while their optical bandgaps increased from 2.1 to 2.7 eV. A critical slowing down phenomenon is observed in the dielectric measurement of I-1 while Br-2 exhibits the ferroelastic domain. Structural and computational analyses elucidate that the order-disorder movement of cations and the distortion of the chain perovskite [SbX] anions skeleton lead to PT. The semiconductor properties are determined by [SbX] anions. The findings contribute to the development of ferroelectric semiconductors and materials with multiple PTs and provide materials for potential applications in the optoelectronic field.

摘要

关于具有多相变的卤素取代调控铁电半导体的研究,文献中存在明显空白。在此,报道了一类新型的具有两个相变(PTs)的一维钙钛矿铁电体(DFP)SbX(DFP = 3,3 - 二氟吡咯鎓,X = I、Br,简称为I - 1和Br - 2)。第一个低温相变是mmmFmm2铁电相变,而高温相变是一个违反直觉的逆温度对称性破缺相变。通过用溴取代碘,居里温度(Tc)从I - 1的348 K显著增加到Br - 2的374 K。它们的铁电性和热释电性得到改善(I - 1和Br - 2的Ps值从1.3增加到4.0 μC cm,p值从0.2增加到0.48 μC cm K),而它们的光学带隙从2.1 eV增加到2.7 eV。在I - 1的介电测量中观察到临界慢化现象,而Br - 2表现出铁弹畴。结构和计算分析表明,阳离子的有序 - 无序运动以及链状钙钛矿[SbX]阴离子骨架的畸变导致相变。半导体性质由[SbX]阴离子决定。这些发现有助于铁电半导体和具有多个相变的材料的发展,并为光电子领域的潜在应用提供材料。

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