Jiao Shulin, Sun Xiaofan, Zhao Min, Chen Peng, Tang Zheng, Li Dong, Zhou Zilong, Li Tingfeng, Zhang Wentao, Lu Yanzhou, Wu Yizhang, Ye Kongmeng, Xu Libo, You Qi, Cai Hong-Ling, Wu Xiaoshan
Collaborative Innovation Center of Advanced Microstructures, Laboratory of Solid State Microstructures & School of Physics, Nanjing University, Nanjing, 210093, China.
Kingwills Advanced Materials Co., Ltd, Nantong, 226000, China.
Small. 2024 Jul;20(29):e2310768. doi: 10.1002/smll.202310768. Epub 2024 Feb 11.
There is a noticeable gap in the literature regarding research on halogen-substitution-regulated ferroelectric semiconductors featuring multiple phase transitions. Here, a new category of 1D perovskite ferroelectrics (DFP)SbX (DFP = 3,3-difluoropyrrolidium, X = I, Br, abbreviated as I-1 and Br-2) with twophase transitions (PTs) is reported. The first low-temperature PT is a mmmFmm2 ferroelectric PT, while the high-temperature PT is a counterintuitive inverse temperature symmetry-breaking PT. By the substitution of iodine with bromine, the Curie temperature (Tc) significantly increases from 348 K of I-1 to 374 K of Br-2. Their ferroelectricity and pyroelectricity are improved (Ps value from 1.3 to 4.0 µC cm, p value from 0.2 to 0.48 µC cm K for I-1 and Br-2), while their optical bandgaps increased from 2.1 to 2.7 eV. A critical slowing down phenomenon is observed in the dielectric measurement of I-1 while Br-2 exhibits the ferroelastic domain. Structural and computational analyses elucidate that the order-disorder movement of cations and the distortion of the chain perovskite [SbX] anions skeleton lead to PT. The semiconductor properties are determined by [SbX] anions. The findings contribute to the development of ferroelectric semiconductors and materials with multiple PTs and provide materials for potential applications in the optoelectronic field.
关于具有多相变的卤素取代调控铁电半导体的研究,文献中存在明显空白。在此,报道了一类新型的具有两个相变(PTs)的一维钙钛矿铁电体(DFP)SbX(DFP = 3,3 - 二氟吡咯鎓,X = I、Br,简称为I - 1和Br - 2)。第一个低温相变是mmmFmm2铁电相变,而高温相变是一个违反直觉的逆温度对称性破缺相变。通过用溴取代碘,居里温度(Tc)从I - 1的348 K显著增加到Br - 2的374 K。它们的铁电性和热释电性得到改善(I - 1和Br - 2的Ps值从1.3增加到4.0 μC cm,p值从0.2增加到0.48 μC cm K),而它们的光学带隙从2.1 eV增加到2.7 eV。在I - 1的介电测量中观察到临界慢化现象,而Br - 2表现出铁弹畴。结构和计算分析表明,阳离子的有序 - 无序运动以及链状钙钛矿[SbX]阴离子骨架的畸变导致相变。半导体性质由[SbX]阴离子决定。这些发现有助于铁电半导体和具有多个相变的材料的发展,并为光电子领域的潜在应用提供材料。