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通过3R-MoS双层中的畴壁释放实现非挥发性电极化切换。

Non-volatile electrical polarization switching via domain wall release in 3R-MoS bilayer.

作者信息

Yang Dongyang, Liang Jing, Wu Jingda, Xiao Yunhuan, Dadap Jerry I, Watanabe Kenji, Taniguchi Takashi, Ye Ziliang

机构信息

Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.

Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.

出版信息

Nat Commun. 2024 Feb 15;15(1):1389. doi: 10.1038/s41467-024-45709-x.

Abstract

Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.

摘要

理解滑动铁电性的本质对于二维铁电材料的发现和应用至关重要。在这项工作中,我们研究了具有天然菱面体堆叠的双层MoS中可切换极化的现象,其中自发极化通过不对称层间耦合与激子效应耦合。利用光谱学和成像技术,我们观察到释放的畴壁如何切换大的单畴的极化。我们的结果突出了畴壁在非扭曲菱面体过渡金属二卤化物极化切换中的重要性,并为其光学响应的非易失性控制开辟了新机会。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d976/10869714/ac5c68ae4a29/41467_2024_45709_Fig1_HTML.jpg

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