Structural, electronic and thermoelectric properties of monolayer TiSe.

CONTEXT AND RESULTS

In this work the first-principles calculations of the structural, electronic and thermoelectric properties of monolayer TiSe are presented. The optimized lattice parameter of monolayer TiSe shows excellent agreement with the experimental value. The computed band structure and density of states calculations predict metallic nature of monolayer TiSe with overlapping of 0.44 eV between the lowest conduction band and top valance band at high symmetry point M. The position of pseudogap formed by Ti-3d orbitals near the Fermi level confirms the mechanical stability of monolayer TiSe. Due to the influence of positive strain (tensile strain), the Ti-Se bond length increases and the layer height decreases. The applied tensile strain changes the metallic nature of TiSe into a semiconductor with opening of bandgap. It has also been observed that the positions of conduction band minima and valance band maxima change with strain. The charge analysis shows that charge transfer from Ti to Se atom increases when tensile strain is applied, while an opposite trend is observed with compression. The computed thermoelectric coefficients i.e. Seeback coefficient, power factor and figure of merit are in good agreement with the experimental data. The temperature dependence of these coefficients is also reported.

COMPUTATIONAL METHOD

The density functional theory based calculations are reported employing the PBE-GGA ansatz using the plane wave-pseudopotential method embodied in the Quantum ESPRESSO package. The self-consistent field calculations are performed over a dense Monkhorst-Pack net of 12 × 12 × 1 k-points. The energy convergence criteria for the self-consistent field calculation were set to 10 Ry/atom with a cutoff energy of 90 Ry. The thermoelectric properties are computed by combining the band structure calculations with the Boltzmann transport equation using Boltztrap2 peckage.