掺杂砷化镓在自然条件下时效导致的点缺陷形成

Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs.

作者信息

Zambrano-Rojas Samuel, Fonthal Gerardo, Escorcia-Salas Gene Elizabeth, Sierra-Ortega José

机构信息

Grupo de Investigación en Física del Estado Sólido, Universidad de la Guajira, Rihoacha 440007, Colombia.

Grupo de Investigación en Teoría de la Materia Condensada, Universidad del Magdalena, Santa Marta 470004, Colombia.

出版信息

Materials (Basel). 2024 Mar 19;17(6):1399. doi: 10.3390/ma17061399.

DOI:10.3390/ma17061399

PMID:38541554

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10972430/

Abstract

The aging dynamics of materials used to build the active part of optoelectronic devices is a topic of current interest. We studied epitaxial samples of GaAs doped with Ge and Sn up to 1×1019 cm, which were stored in a dry and dark environment for 26 years. Photoluminescence spectra were taken in three periods: 1995, 2001 and 2021. In the last year, time-resolved photoluminescence, Raman, and X-ray measurements were also performed to study the evolution of defects formed by the action of O in the samples and its correlation with the doping with Ge and Sn impurities. We found that oxygen formed oxides that gave off Ga and As atoms, leaving vacancies mainly of As. These vacancies formed complexes with the dopant impurities. The concentration of vacancies over the 26 years could be as large as 1×1018 cm.

摘要

用于构建光电器件有源部分的材料的老化动力学是当前备受关注的一个话题。我们研究了掺杂Ge和Sn至1×10¹⁹ cm⁻³的GaAs外延样品，这些样品在干燥黑暗的环境中储存了26年。在1995年、2001年和2021年三个时间段采集了光致发光光谱。在最后一年，还进行了时间分辨光致发光、拉曼和X射线测量，以研究样品中由O作用形成的缺陷的演变及其与Ge和Sn杂质掺杂的相关性。我们发现，氧形成了释放出Ga和As原子的氧化物，主要留下了As空位。这些空位与掺杂杂质形成了络合物。26年间空位的浓度可能高达1×10¹⁸ cm⁻³。