He Ding, Yu Zhentao, Chen Jie, Du Kaiyuan, Zhu Zhiqiang, Cheng Pu, Tan Cheng
Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China.
Micromachines (Basel). 2024 Feb 28;15(3):332. doi: 10.3390/mi15030332.
Generalized broadband operation facilitates multifunction or multiband highly integrated applications, such as modern transceiver systems, where ultra-wideband bidirectional passive mixers are favored to avoid a complex up/down-conversion scheme. In this paper, a modified Ruthroff-type transmission line transformer (TLT) balun is presented to enhance the isolation of the mixer from the local oscillator (LO) to the radio frequency (RF). Compared to the conventional methods, the proposed Ruthroff-type architecture adopts a combination of shunt capacitors and parallel coupled lines to improve the return loss at the LO port, thus effectively avoiding the area consumption for the diode-to-balun impedance transformation while simultaneously providing a suitable point for IF extraction. In addition, a parallel compensation technique consisting of an inductor and resistor is applied to the RF balun to significantly improve the amplitude/phase balance performance over a wide bandwidth. Benefiting from the aforementioned operations, an isolation-enhanced 8-30 GHz passive double-balanced mixer is designed as a proof-of-principle demonstration via 0.15-micrometer GaAs p-HEMT technology. It exhibits ultra-broadband performance with 7 dB average conversion loss and 50 dB LO-to-RF isolation under 15 dBm LO power. The monolithic microwave integrated circuit area is 0.96 × 1.68 mm including all pads.
广义宽带操作有利于多功能或多频段高度集成应用,如现代收发器系统,其中超宽带双向无源混频器受到青睐,以避免复杂的上/下变频方案。本文提出了一种改进的Ruthroff型传输线变压器(TLT)巴伦,以增强混频器从本地振荡器(LO)到射频(RF)的隔离。与传统方法相比,所提出的Ruthroff型架构采用并联电容器和并联耦合线的组合来改善LO端口的回波损耗,从而有效避免二极管到巴伦阻抗变换的面积消耗,同时为中频提取提供合适的点。此外,一种由电感和电阻组成的并联补偿技术应用于RF巴伦,以在宽带宽内显著提高幅度/相位平衡性能。受益于上述操作,通过0.15微米砷化镓p-HEMT技术设计了一个隔离增强的8-30 GHz无源双平衡混频器作为原理验证演示。在15 dBm LO功率下,它表现出超宽带性能,平均转换损耗为7 dB,LO到RF隔离为50 dB。包括所有焊盘在内的单片微波集成电路面积为0.96×1.68平方毫米。