Tang Ziqi, Yao Disheng, Li Ying, Li Chao, Xia Tian, Tian Nan, Wang Jilin, Zheng Guoyuan, Mo Shuyi, Long Fei, Zhou Bing
Guangxi Key Laboratory of Optical and Electronic Materials and Devices, School of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, People's Republic of China.
Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, People's Republic of China.
ACS Appl Mater Interfaces. 2024 May 8;16(18):23973-23984. doi: 10.1021/acsami.3c18974. Epub 2024 Apr 24.
Cuprous thiocyanate (CuSCN) emerges as a prime candidate among inorganic hole-transport materials, particularly suitable for the fabrication of perovskite solar cells. Nonetheless, there is an Ohmic contact degradation between the perovskite and CuSCN layers. This is induced by polar solvents and undesired purities, which reduce device efficiency and operational stability. In this work, we introduce amidinothiourea (ASU) as an intermediate layer between perovskites and CuSCN to overcome the above obstacles. The characterization results confirm that ASU-modified perovskites have eliminated trap-induced defects by strong chemical bonding between -NH- and C═S from ASU and under-coordinated ions in perovskites. The interfacial engineering based on the ASU also reduces the potential barrier between the perovskite and CuSCN layers. The ASU-treated perovskite solar cells (PSC) with a gold electrode obtains an improved power conversion efficiency (PCE) from 16.36 to 18.03%. Furthermore, after being stored for 1800 h in ambient air (relative humidity (RH) = 45%), the related device without encapsulation maintains over 90% of its initial efficiency. The further combination of ASU and carbon-tape electrodes demonstrates its potential to fabricate low-cost but stable carbon-based PSCs. This work finds a universal approach for the fabrication of efficient and stable PSCs with different device structures.
硫氰酸亚铜(CuSCN)成为无机空穴传输材料中的首选,特别适用于制造钙钛矿太阳能电池。然而,钙钛矿层和CuSCN层之间存在欧姆接触退化现象。这是由极性溶剂和不想要的杂质引起的,它们会降低器件效率和运行稳定性。在这项工作中,我们引入脒基硫脲(ASU)作为钙钛矿和CuSCN之间的中间层,以克服上述障碍。表征结果证实,ASU修饰的钙钛矿通过ASU中的-NH-和C═S与钙钛矿中配位不足的离子之间的强化学键合消除了陷阱诱导的缺陷。基于ASU的界面工程也降低了钙钛矿层和CuSCN层之间的势垒。采用金电极的ASU处理的钙钛矿太阳能电池(PSC)的功率转换效率(PCE)从16.36%提高到了18.03%。此外,在环境空气中(相对湿度(RH)=45%)储存1800小时后,未封装的相关器件保持了其初始效率的90%以上。ASU与碳带电极的进一步结合证明了其制造低成本但稳定的碳基PSC的潜力。这项工作为制造具有不同器件结构的高效稳定PSC找到了一种通用方法。