Deng Zhixiang, Wu Zhixuan, Liu Xinkuan, Chen Zhengai, Sun Yan, Dai Ning, Ge Meiying
School of Material and Chemistry, University of Shanghai for Science and Technology Shanghai 200093 China
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai 200083 China
RSC Adv. 2024 May 8;14(21):15039-15047. doi: 10.1039/d4ra01862a. eCollection 2024 May 2.
The influence of ambient humidity on the gas-sensing characteristics of metal oxide semiconductors has been one of the greatest obstacles for gas-sensing applications. In this paper, the pure WO and CeO-modified WO nanocubes were prepared by a simple hydrothermal method, and their gas-sensing characteristics in dry and humid atmospheres were investigated. The results show that CeO/WO demonstrated excellent gas-sensing properties toward HS with high sensitivity and high selectivity at 115 °C. Noteworthy, the humidity independence of the CeO/WO increased compared to the WO. The response retentions over the whole humidity range of the CeO/WO-6 and CeO/WO-15 sensors were 70.3, and 76%, respectively, which were much higher than the WO sensor (17.9%). The gas-sensing mechanism of CeO-modified WO is discussed based on the gas sensitivity properties. The obtained results provide a promising route to enhance the anti-humidity properties of metal oxide semiconductor gas sensors.
环境湿度对金属氧化物半导体气敏特性的影响一直是气敏应用面临的最大障碍之一。本文采用简单的水热法制备了纯WO和CeO改性的WO纳米立方体，并研究了它们在干燥和潮湿气氛中的气敏特性。结果表明，CeO/WO在115℃时对HS表现出优异的气敏性能，具有高灵敏度和高选择性。值得注意的是，与WO相比，CeO/WO的湿度独立性有所提高。CeO/WO-6和CeO/WO-15传感器在整个湿度范围内的响应保持率分别为70.3%和76%，远高于WO传感器（17.9%）。基于气敏性能讨论了CeO改性WO的气敏机理。所得结果为提高金属氧化物半导体气体传感器的抗湿性能提供了一条有前景的途径。
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