Tien Ching-Ho, Liu Jun-Qing, Chen Lung-Chien
Department of Electronic Engineering, Ming Chi University of Technology No. 84, Gungjuan Rd. New Taipei City 24301 Taiwan
Organic Electronics Research Center, Ming Chi University of Technology No. 84, Gungjuan Rd. New Taipei City 24301 Taiwan.
RSC Adv. 2024 Jun 10;14(26):18567-18575. doi: 10.1039/d4ra02652g. eCollection 2024 Jun 6.
All-inorganic perovskites show great promise as an emission layer in perovskite light-emitting diodes (PeLEDs) owing to their easy solution processing, low manufacturing cost, and excellent optoelectronic properties. However, there is still an immense performance gap from small-area devices to large-area PeLED devices. The inhomogeneity of large-area high-quality perovskite films inevitably leads to vast defects and electroluminescence performance losses. Herein, a post-hot-cast annealing deposition scheme and the introduction of the multifunctional molecule 2-amino-1,3-propanediol (APDO) were proposed to regulate the crystallization of the perovskite film. As a result, uniform APDO:CsPbBrCl perovskite films with high crystallinity and lower defect density were deposited by post-hot-cast annealing. A decent maximum brightness of 2659 cd m was achieved for the large-area cyan PeLEDs with an emitting area of 400 mm.
全无机钙钛矿由于其易于溶液加工、制造成本低和优异的光电性能,在钙钛矿发光二极管(PeLED)中作为发光层显示出巨大的潜力。然而,从小面积器件到大面积PeLED器件仍存在巨大的性能差距。大面积高质量钙钛矿薄膜的不均匀性不可避免地导致大量缺陷和电致发光性能损失。在此,提出了一种后热铸退火沉积方案并引入多功能分子2-氨基-1,3-丙二醇(APDO)来调节钙钛矿薄膜的结晶。结果,通过后热铸退火沉积了具有高结晶度和较低缺陷密度的均匀APDO:CsPbBrCl钙钛矿薄膜。对于发射面积为400平方毫米的大面积青色PeLED,实现了2659坎德拉每平方米的可观最大亮度。