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用于高效紫外光电探测器的高发射性镧系元素基零维金属卤化物纳米晶体

Highly Emissive Lanthanide-Based 0D Metal Halide Nanocrystals for Efficient Ultraviolet Photodetector.

作者信息

Min Jeong Wan, Samanta Tuhin, Lee Ah Young, Jung Young-Kwang, Viswanath Noolu Srinivasa Manikanta, Kim Yu Ri, Cho Han Bin, Moon Ji Yoon, Jang Se Hyuk, Kim Jong H, Im Won Bin

机构信息

Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea.

Department of Molecular Science and Technology, Ajou University, Suwon, 16499, Republic of Korea.

出版信息

Small. 2024 Oct;20(43):e2402951. doi: 10.1002/smll.202402951. Epub 2024 Jun 25.

Abstract

Recently, lanthanide-based 0D metal halides have attracted considerable attention for their applications in X-ray imaging, light-emitting diodes (LEDs), sensors, and photodetectors. Herein, lead-free 0D gadolinium-alloyed cesium cerium chloride (Gd-alloyed CsCeCl) nanocrystals (NCs) are introduced as promising materials for optoelectronic application owing to their unique optical properties. The incorporation of Gd in CsCeCl (CCC) NCs is proposed to increase the photoluminescence quantum yield (PLQY) from 57% to 96%, along with significantly enhanced phase and chemical stability. The structural analysis is performed by density functional theory (DFT) to confirm the effect of Gd in CsCe GdCl (CCGC) alloy system. Moreover, the CCGC NCs are applied as the active layer in UVPDs with different Gd concentration. The excellent device performance is shown at 20% of Gd in CCGC NCs with high detectivity (7.938 × 10 Jones) and responsivity (0.195 A W) at -0.1 V at 310 nm. This study paves the way for the development of lanthanide-based metal halide NCs for next-generation UVPDs and other optoelectronic applications.

摘要

最近,基于镧系元素的零维金属卤化物因其在X射线成像、发光二极管(LED)、传感器和光电探测器中的应用而备受关注。在此,无铅零维钆合金化氯化铯铈(Gd合金化CsCeCl)纳米晶体(NCs)因其独特的光学性质被引入作为有前途的光电应用材料。有人提出在CsCeCl(CCC)NCs中掺入Gd可将光致发光量子产率(PLQY)从57%提高到96%,同时显著提高相稳定性和化学稳定性。通过密度泛函理论(DFT)进行结构分析,以确认Gd在CsCeGdCl(CCGC)合金体系中的作用。此外,CCGC NCs被用作不同Gd浓度的紫外光电探测器(UVPDs)的活性层。在310nm、-0.1V条件下,CCGC NCs中Gd含量为20%时,器件表现出优异的性能,探测率高达7.938×10琼斯,响应度为0.195A/W。本研究为开发用于下一代UVPDs和其他光电应用的基于镧系元素的金属卤化物NCs铺平了道路。

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