Yu Qin, Feng Shizun, Yu Jinling, Cheng Shuying, Lai Yunfeng, Chen Yonghai, He Ke
Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China.
Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
ACS Appl Mater Interfaces. 2024 Jul 31;16(30):40297-40308. doi: 10.1021/acsami.4c11221. Epub 2024 Jul 17.
Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator BiTe nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of BiTe nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the BiTe nanowire on the Si substrate is an order of magnitude larger than that on SiO, which may be due to the spin injection from the Si substrate to the BiTe nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the BiTe nanowire. This work suggests that topological insulator BiTe nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.
研究了拓扑绝缘体BiTe纳米线中与螺旋度相关的光电流(HDPC)及其调制。结果表明,当激光的入射平面垂直于纳米线时,HDPC是入射角的奇函数,这主要由源于BiTe纳米线表面态的圆光电流效应贡献。当激光的入射平面平行于纳米线时,HDPC近似为入射角的偶函数,这是由于来自表面态的圆光子拖曳效应。发现HDPC可以通过背栅和离子液体顶栅有效地调节。通过分析HDPC对衬底的依赖性,我们发现Si衬底上的BiTe纳米线的HDPC比SiO上的大一个数量级,这可能是由于从Si衬底到BiTe纳米线的自旋注入。此外,通过施加不同的偏压,可以通过对BiTe纳米线中测量的光电流进行算术运算来提取偏振光的斯托克斯参数。这项工作表明,拓扑绝缘体BiTe纳米线可能为光自旋电子器件提供一个良好的平台,特别是在手性和旋光检测方面。