Liu Yan, Hu Lingxi
School of Microelectronics, Shenzhen Institute of Information Technology, Shenzhen 518172, China.
Digital and Intelligent Agriculture Research Institute, School of Information Engineering, Huzhou University, Huzhou 313000, China.
Materials (Basel). 2024 Jul 19;17(14):3571. doi: 10.3390/ma17143571.
A broadband absorber based on metamaterials of graphene and vanadium dioxide (VO) is proposed and investigated in the terahertz (THz) regime, which can be used for switch applications with a dynamically variable bandwidth by electrically and thermally controlling the Fermi energy level of graphene and the conductivity of VO, respectively. The proposed absorber turns 'on' from 1.5 to 5.4 THz, with the modulation depth reaching 97.1% and the absorptance exceeding 90% when the Fermi energy levels of graphene are set as 0.7 eV, and VO is in the metallic phase. On the contrary, the absorptance is close to zero and the absorber turns 'off' with the Fermi energy level setting at 0 eV and VO in the insulating phase. Furthermore, other four broadband absorption modes can be achieved utilizing the active materials graphene and VO. The proposed terahertz absorber may benefit the areas of broadband switch, cloaking objects, THz communications and other applications.
提出并研究了一种基于石墨烯和二氧化钒(VO₂)超材料的宽带吸收器,该吸收器工作在太赫兹(THz)波段,通过分别对石墨烯的费米能级和VO₂的电导率进行电控制和热控制,可用于具有动态可变带宽的开关应用。当石墨烯的费米能级设定为0.7 eV且VO₂处于金属相时,所提出的吸收器在1.5至5.4 THz范围内“开启”,调制深度达到97.1%,吸收率超过90%。相反,当费米能级设定为0 eV且VO₂处于绝缘相时,吸收率接近于零,吸收器“关闭”。此外,利用活性材料石墨烯和VO₂还可以实现其他四种宽带吸收模式。所提出的太赫兹吸收器可能会对宽带开关、物体隐身、太赫兹通信等应用领域有所帮助。