Deshpande Shatayu S, Saykar Nilesh G, Mandal Animesh, Rahane Swati, Jadhav Yogesh A, Upadhyay Kahaly M, Nagy G N, Shinde Aparna, Suresh Sunil, Rondiya Sachin R
Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India.
Department of Physics, Savitribai Phule University, Pune 411007, India.
Langmuir. 2024 Aug 6;40(31):16180-16189. doi: 10.1021/acs.langmuir.4c01278. Epub 2024 Jul 28.
Lead-tin (Pb-Sn) mixed-halide perovskites show potential for single-junction and tandem solar cells due to their adjustable band gaps, flexible composition, and superior environmental stability compared to three-dimensional (3D) perovskites. However, they have lower power conversion efficiencies. Understanding band alignment and charge carrier dynamics is essential for enhancing photovoltaic performance. In this view, herein we have prepared thin films of mixed Pb-Sn-based two dimensional (2D) Ruddlesden-Popper (RP) perovskites BAFA(PbSn)I using a solution-based method. XRD study revealed the formation of orthorhombic phases for pristine (BAFAPbI) and mixed Pb-Sn perovskite thin films. UV-vis analysis showed that different = 2 and = 3 phases are present in the pristine sample. In contrast, Pb-Sn-doped samples showed no signature of other phases with a prominent red-shift in the visible spectral region. Cyclic voltammetry showed peaks for electron transfers at the band edges. Additionally, electrochemical and optical band gap matching was observed, along with decreased peak intensity due to less reactant and altered electrolyte-perovskite interface stability. Density functional theory (DFT) calculations revealed that the reduced band gap is due to the alteration of electrostatic interactions and charge distribution within the lattice upon Sn substitution. Low-temperature PL analysis provided insights into charge carrier dynamics with Sn substitution and suggested the suppression of higher phases and self-trapped excitons/carriers in mixed Pb-Sn quasi-2D RP perovskite thin films. This study sheds light on the electron transfer phenomena between TiO and SnO layers by estimating band offsets from valence band maximum (VBM) and conduction band minimum (CBM), which is crucial for future applications in fabricating stable and efficient 2D-Pb-Sn mixed perovskites for optoelectronic applications.
铅锡(Pb-Sn)混合卤化物钙钛矿由于其可调的带隙、灵活的组成以及与三维(3D)钙钛矿相比更优异的环境稳定性,在单结和串联太阳能电池方面展现出潜力。然而,它们的功率转换效率较低。理解能带排列和电荷载流子动力学对于提高光伏性能至关重要。基于此观点,我们在此使用溶液法制备了基于Pb-Sn的二维(2D)Ruddlesden-Popper(RP)钙钛矿BAFA(PbSn)I的薄膜。X射线衍射(XRD)研究表明,原始的(BAFAPbI)和混合Pb-Sn钙钛矿薄膜形成了正交相。紫外可见(UV-vis)分析表明,原始样品中存在不同的n = 2和n = 3相。相比之下,Pb-Sn掺杂样品在可见光谱区域没有其他相的特征,且有明显的红移。循环伏安法显示了能带边缘电子转移的峰。此外,观察到了电化学和光学带隙匹配,同时由于反应物减少和电解质-钙钛矿界面稳定性改变,峰强度降低。密度泛函理论(DFT)计算表明,带隙减小是由于Sn取代后晶格内静电相互作用和电荷分布的改变。低温光致发光(PL)分析深入了解了Sn取代后的电荷载流子动力学,并表明在混合Pb-Sn准二维RP钙钛矿薄膜中抑制了更高的n相以及自陷激子/载流子。这项研究通过估计价带最大值(VBM)和导带最小值(CBM)的能带偏移,揭示了TiO和SnO层之间的电子转移现象,这对于未来制造用于光电子应用的稳定高效二维Pb-Sn混合钙钛矿至关重要。