Meng Bingheng, Kang Yubin, Zhang Xuanyu, Yu Xuanchi, Wang Shan, Wang Puning, Tang Jilong, Hao Qun, Wei Zhipeng, Chen Rui
State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41677-41683. doi: 10.1021/acsami.4c06544. Epub 2024 Jul 28.
Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In this article, the random lasing characteristics based on GaAs NW arrays have been discussed theoretically. According to the simulation, GaAs/AlGaAs core-shell NWs with an optimal diameter, density, and Al content in the shell have been grown. Systematic morphological and optical characterizations were carried out. It is found that the GaAs NWs with the additional growth of the AlGaAs shell exhibit improved emission by about 2 orders of magnitude at low temperatures, which can be attributed to the suppression of crystal defects. At room temperature, lasing was observed with a threshold around 70.16 mW/cm, and the random lasing mechanism was discussed in detail. This work is of great significance for the design of random cavities based on semiconductor NWs, which is important for optoelectronic integration.
基于低维砷化镓纳米线（NWs）的室温激光发射是实现用于纳米光子学的近红外激光器最关键且最具挑战性的问题之一。在本文中，已对基于砷化镓NW阵列的随机激光特性进行了理论探讨。根据模拟结果，生长出了具有最佳直径、密度以及壳层铝含量的砷化镓/铝镓砷核壳NWs。进行了系统的形态学和光学表征。结果发现，额外生长铝镓砷壳层的砷化镓NWs在低温下发射增强了约2个数量级，这可归因于晶体缺陷的抑制。在室温下，观察到阈值约为70.16 mW/cm的激光发射，并详细讨论了随机激光机制。这项工作对于基于半导体NWs的随机腔设计具有重要意义，而随机腔设计对于光电集成很重要。
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