Hierarchical self-assembly of Au-nanoparticles into filaments: evolution and break.

We compare the assembly of individual Au nanoparticles in a vacuum and between two Au(111) surfaces classical molecular dynamics on a timescale of 100 ns. In a vacuum, the assembly of three nanoparticles used as seeds, initially showing decahedral, truncated octahedral and icosahedral shapes with a diameter of 1.5-1.7 nm, evolves into a spherical object with about 10-12 layers and a gyration radius ∼2.5-2.8 nm. In a vacuum, 42% show just one 5-fold symmetry axis, 33% adopt a defected icosahedral arrangement, and 25% lose all 5-fold symmetry and display a face-centred-cubic shape with several parallel stacking faults. We model a constrained version of the same assembly that takes place between two Au(111) surfaces. During the dynamics, the two Au(111) surfaces are kept fixed at distances of 55 Å, 55.5 Å, 56 Å, and 56.5 Å. The latter distance accommodates 24 Au layers with no strain, while the others correspond to nominal strains of 1.5%, 2.4%, and 3.3%, respectively. In the constrained assembly, each individual seed tends to reorganize into a layered configuration, but the filament may break. The probability of breaking the assembled nanofilament depends on the individual morphology of the seeds. It is more likely to break at the decahedron/icosahedron interface, whilst it is more likely to layer with respect to the (111) orientation when a truncated octahedron sits between the decahedron and the icosahedron. We further observe that nanofilaments between surfaces at 56 Å have a >90% probability of breaking, which decreases to 8% when the surfaces are 55 Å apart. We attribute the dramatic change in probability of breaking to the peculiar decahedron/icosahedron interface and the higher average atomic strain in the nanofilaments. This experiment can shed light on the understanding and control of the formation of metallic nanowires and nanoparticle-assembled networks, which find applications in next-generation electronic devices, such as resistive random access memories and neuromorphic devices.