Su Haitian, Wang Ji-Yin, Gao Han, Luo Yi, Yan Shili, Wu Xingjun, Li Guoan, Shen Jie, Lu Li, Pan Dong, Zhao Jianhua, Zhang Po, Xu H Q
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, <a href="https://ror.org/02v51f717">Peking University</a>, Beijing 100871, China.
Institute of Condensed Matter and Material Physics, School of Physics, <a href="https://ror.org/02v51f717">Peking University</a>, Beijing 100871, China.
Phys Rev Lett. 2024 Aug 23;133(8):087001. doi: 10.1103/PhysRevLett.133.087001.
Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the "superconducting diode effect." Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to nonequilibrium dynamics or dissipation in periodically driven superconducting systems.
在某些对称性破缺条件下,超导系统会表现出不对称的临界电流,即所谓的“超导二极管效应”。近来,具有理想超导二极管效率或单向超导性的系统受到了广泛关注。在这项工作中,我们报告了对微波辐照和磁场作用下的铝 - 砷化铟纳米线 - 铝约瑟夫森结的研究。我们观察到在微波驱动下超导二极管效应增强,其特征是电压 - 电流特性曲线中零电压台阶出现水平偏移,且该偏移随微波功率增加。在足够高的驱动幅度下,器件进入单向超导状态。该偏移会随着磁场方向的反转而改变符号。同时,当功率和磁场都较大时,偏移幅度对以分贝毫瓦为单位的微波功率呈现大致线性响应。观察到的这些特征让人联想到最近一个使用电阻分流结(RSJ)模型的理论提议。然而,RSJ模型并不能完全解释实验结果,这表明存在一种与周期性驱动超导系统中的非平衡动力学或耗散可能相关的单向超导新机制。