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钨插层2H型二硒化铌上α形超导演化的观察

Observation of a -Shape Superconductivity Evolution on Tungsten-Intercalated 2H-Type Niobium Diselenide.

作者信息

Wang Jin, Han Jia, Chen Shu, Li Jie, Wang Yangzhou, Wu Chuanyi, Wang Qianshuo, Wang Zihan, Chen Fei, Wan Wen

机构信息

Materials Genome Institute, Shanghai University, Shanghai 200444, China.

College of Physics and Electronic Information Engineering, Zhejiang Institute of Photoelectronics & Zhejiang Institute for Advanced Light Source, Zhejiang Normal University, Jinhua, Zhejiang 321004, China.

出版信息

ACS Nano. 2024 Oct 8;18(40):27665-27671. doi: 10.1021/acsnano.4c09443. Epub 2024 Sep 29.

Abstract

van der Waals-layered niobium diselenide (NbSe) intercalated by -electron transition metals is an ideal test bed for the exploration of their diversiform evolution of ground states. These intercalations are mostly viewed as ordered structures aligned with periodicities of their host materials that enable control of the electronic phases via gradually changing of intercalation ratios. Here, we present the structure and superconductivity in tungsten (W)-intercalated 2H-NbSe crystals, which reveals an order to disorder distribution of W atoms with increasing confined intercalating amounts, leading to an approximate -shape suppression of superconductivity. Aided by density functional theory calculations, we demonstrate that the local magnetic moment around W intercalants induced by the charge redistribution gives rise to the quick superconductivity suppression in 2H-NbSe below a certain dilute amount (W% = 0.06). Simultaneously, W intercalants also induce structural aberration due to aggregation effects and inhibit the generation of an ordered structure in 2H-NbSe, resulting in a recovery of its superconductivity. The alteration of structure and electronic phases in 2H-NbSe via intercalation of nonmagnetic transition metals in the van der Waals gap enables the exploration of combined magnetic quantum criticality, superconductivity, and other related electronic correlations.

摘要

由π电子过渡金属插层的范德华层状二硒化铌(NbSe)是探索其基态多样演化的理想试验平台。这些插层大多被视为与主体材料周期性对齐的有序结构,通过逐渐改变插层比例来控制电子相。在此,我们展示了钨(W)插层的2H-NbSe晶体的结构和超导性,其揭示了随着受限插层量增加,W原子从有序到无序的分布,导致超导性呈近似驼峰状抑制。借助密度泛函理论计算,我们证明了电荷重新分布在W插层剂周围诱导的局部磁矩,导致低于一定稀释量(W% = 0.06)时2H-NbSe中的超导性迅速抑制。同时,W插层剂由于聚集效应也会诱导结构畸变,并抑制2H-NbSe中有序结构的产生,从而导致其超导性恢复。通过在范德华间隙中插入非磁性过渡金属来改变2H-NbSe的结构和电子相,能够探索组合的磁量子临界性、超导性以及其他相关的电子关联。

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