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通过范德华界面磁化学调控二维异质结构中的室温以上铁磁性

Above-Room-Temperature Ferromagnetism Regulation in Two-Dimensional Heterostructures by van der Waals Interfacial Magnetochemistry.

作者信息

Zhang Gaojie, Wu Hao, Yang Li, Chen Zheng, Jin Wen, Xiao Bichen, Zhang Wenfeng, Song Changsheng, Chang Haixin

机构信息

State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.

出版信息

J Am Chem Soc. 2024 Dec 11;146(49):34070-34079. doi: 10.1021/jacs.4c13391. Epub 2024 Nov 30.

Abstract

Most methods for regulating physical and chemical properties of materials involve the breaking and formation of chemical bonds, which inevitably change local structures. Two-dimensional (2D) ferromagnets are critical for spintronic memory and quantum devices, but most of them maintain ferromagnetism at low temperature, and multiaspect control of 2D ferromagnetism at room temperature or above is still missing. Here, we report a nondestructive, van der Waals (vdW) interfacial magnetochemistry strategy for above-room-temperature, multiaspect 2D ferromagnetism regulation. By vdW coupling nonmagnetic MoS, WSe, or BiSbTeSe with 2D vdW ferromagnet FeGaTe, the Curie temperature is enhanced up to 400 K, best for 2D ferromagnets, with 26.8% tuning of room-temperature perpendicular magnetic anisotropy and an unconventional anomalous Hall effect up to 340 K. These phenomena originate from changes in magnetic exchange interactions and magnetic anisotropy energy by interfacial charge transfer and spin-orbit coupling. This work opens a pathway for engineering multifunctional 2D heterostructures by vdW interfacial magnetochemistry.

摘要

大多数调节材料物理和化学性质的方法都涉及化学键的断裂和形成,这不可避免地会改变局部结构。二维(2D)铁磁体对自旋电子存储器和量子器件至关重要,但其中大多数在低温下保持铁磁性,室温及以上二维铁磁性的多方面控制仍然缺失。在此,我们报道了一种用于室温以上二维铁磁性多方面调节的无损范德华(vdW)界面磁化学策略。通过将非磁性的MoS、WSe或BiSbTeSe与二维vdW铁磁体FeGaTe进行vdW耦合,居里温度提高到400 K,这对二维铁磁体来说是最佳的,室温垂直磁各向异性调谐了26.8%,并且在高达340 K时具有非常规反常霍尔效应。这些现象源于界面电荷转移和自旋轨道耦合引起的磁交换相互作用和磁各向异性能量的变化。这项工作为通过vdW界面磁化学设计多功能二维异质结构开辟了一条途径。

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