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一种用于预测缺陷γ-石墨炔纳米带热电效率的前沿神经网络方法。

A cutting-edge neural network approach for predicting the thermoelectric efficiency of defective gamma-graphyne nanoribbons.

作者信息

Guo Jiayi, Cui Chunfeng, Ouyang Tao, Cao Juexian, Wei Xiaolin

机构信息

Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China.

College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang, 421002, People's Republic of China.

出版信息

Sci Rep. 2025 Jan 7;15(1):1182. doi: 10.1038/s41598-024-84074-z.

DOI:10.1038/s41598-024-84074-z
PMID:39775093
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11707238/
Abstract

This study predicts the thermoelectric figure of merit (ZT) for defective gamma-graphyne nanoribbons (γ-GYNRs) using binary coding, convolutional neural networks (CNN), long short-term memory networks (LSTM), and multi-scale feature fusion. The approach accurately predicts ZT values with only 500 initial structures (3% of 16,512 candidates), achieving an R above 0.91 and a mean absolute error (MAE) of 0.05 to 0.06. The use of artificial feature extraction combined with an attention mechanism reveals that the number and distribution of defects are crucial for achieving high ZT values. γ-GYNRs with moderate and evenly distributed defect count show superior thermoelectric performance. This demonstrates the effectiveness of neural networks in designing low-dimensional materials like γ-GYNRs and offers insights into exploring other materials with excellent thermoelectric properties.

摘要

本研究利用二进制编码、卷积神经网络(CNN)、长短期记忆网络(LSTM)和多尺度特征融合来预测有缺陷的γ-石墨炔纳米带(γ-GYNRs)的热电优值(ZT)。该方法仅用500个初始结构(占16512个候选结构的3%)就能准确预测ZT值,相关系数R大于0.91,平均绝对误差(MAE)为0.05至0.06。结合注意力机制使用人工特征提取表明,缺陷的数量和分布对于实现高ZT值至关重要。具有适度且均匀分布的缺陷数量的γ-GYNRs表现出卓越的热电性能。这证明了神经网络在设计如γ-GYNRs这样的低维材料方面的有效性,并为探索其他具有优异热电性能的材料提供了见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/f150dadb5f9e/41598_2024_84074_Fig7_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/f150dadb5f9e/41598_2024_84074_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/eea75aa5f4ad/41598_2024_84074_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/f9f0386df265/41598_2024_84074_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/e28267d3adcb/41598_2024_84074_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c71e/11707238/f150dadb5f9e/41598_2024_84074_Fig7_HTML.jpg

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本文引用的文献

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Edge Functionalization of Bulk γ-Graphyne Facilitates Mechanical Exfoliation and Modulates the Mode of Sheet Stacking.块状γ-石墨炔的边缘功能化促进了机械剥离并调节了片层堆叠模式。
J Am Chem Soc. 2024 May 15;146(19):12889-12894. doi: 10.1021/jacs.4c02064. Epub 2024 May 1.
2
Graphyne and graphdiyne nanoribbons: from their structures and properties to potential applications.石墨炔和石墨二炔纳米带:从其结构与性质到潜在应用
Phys Chem Chem Phys. 2024 Jan 17;26(3):1541-1563. doi: 10.1039/d3cp04393b.
3
Precise Preparation of Triarylboron-Based Graphdiyne Analogues for Gas Separation.
用于气体分离的三芳基硼基类石墨炔的精确制备
Angew Chem Int Ed Engl. 2024 Jan 25;63(5):e202317294. doi: 10.1002/anie.202317294. Epub 2023 Dec 22.
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Graphdiyne and Its Derivatives as Efficient Charge Reservoirs and Transporters in Semiconductor Devices.二维石墨炔及其衍生物在半导体器件中作为高效的电荷储存器和传输体。
Adv Mater. 2023 Jun;35(25):e2212159. doi: 10.1002/adma.202212159. Epub 2023 May 8.
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Advances in Versatile GeTe Thermoelectrics from Materials to Devices.从材料到器件的多功能锗碲热电材料的进展
Adv Mater. 2023 Jan;35(2):e2208272. doi: 10.1002/adma.202208272. Epub 2022 Nov 28.
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2D graphdiyne: an emerging carbon material.二维石墨炔:一种新兴的碳材料。
Chem Soc Rev. 2022 Apr 4;51(7):2681-2709. doi: 10.1039/d1cs00592h.
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Thermoelectric cooling materials.热电制冷材料。
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