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1-20电子伏特电子引发的DNA中的过热反应:交联、链断裂、聚集损伤和碱基修饰的绝对截面

Hyperthermal Reactions in DNA Triggered by 1-20 eV Electrons: Absolute Cross Sections for Crosslinks, Strand Breaks, Clustered Damages and Base Modifications.

作者信息

Dong Yanfang, Huang Xin, Zhang Wenlu, Shao Yu, Cloutier Pierre, Zheng Yi, Sanche Léon

机构信息

College of Basic Medicine and Forensic Medicine, Henan University of Science and Technology, Luoyang 471000, China.

State Key Laboratory of Photocatalysis on Energy and Environment, Faculty of Chemistry, Fuzhou University, Fuzhou 350116, China.

出版信息

Int J Mol Sci. 2025 Apr 25;26(9):4057. doi: 10.3390/ijms26094057.

DOI:10.3390/ijms26094057
PMID:40362296
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12072190/
Abstract

Absolute cross sections (ACSs) are needed to estimate cellular damage induced by high-energy radiation (HER). Low-energy electrons (LEEs), which are the most numerous secondary particles generated by HER, can trigger hyperthermal reactions in DNA. ACSs for such reactions are essential input parameters to calculate radiobiological effectiveness, particularly in targeted radiotherapy. Using a mathematical model, we generate ACSs from effective damage yields induced by LEE impact on 3197 base-pair plasmid DNA films. Direct or enzyme-revealed conformational damages, quantified by electrophoresis, provide the first complete set of ACSs for inducing crosslinks, double-strand breaks (DSBs), single-strand breaks, base-damage-related crosslinks, non-DSB clustered damages (NDCDs), and isolated base damages. These ACSs are generated across the 1-20 eV range, at one eV intervals. They exhibit a strong energy dependence with maximum values at 10 eV of 3.7 ± 0.8, 3.5 ± 0.6, 45.4 ± 4.1, 2.9 ± 1.1, 5.1 ± 1.4, and 54.0 ± 16.4 × 10 cm, respectively. ACSs for DSBs, NDCDs, and crosslinks clearly indicate that lesions threatening cell function and genetic stability can be generated by a single LEE. At 5 and 10 eV, total damage ACSs are 63% and 80% larger, respectively, than those previously determined for the same plasmids bound to arginine, a constituent of histones protecting DNA.

摘要

估算高能辐射(HER)所致细胞损伤需要绝对截面(ACS)。低能电子(LEE)是HER产生的数量最多的次级粒子,可引发DNA中的过热反应。此类反应的ACS是计算放射生物学有效性的重要输入参数,尤其是在靶向放射治疗中。我们使用数学模型,根据LEE对3197个碱基对的质粒DNA薄膜的撞击所诱导的有效损伤产率生成ACS。通过电泳定量的直接或酶揭示的构象损伤,提供了用于诱导交联、双链断裂(DSB)、单链断裂、碱基损伤相关交联、非DSB簇状损伤(NDCD)和孤立碱基损伤的第一套完整的ACS。这些ACS是在1 - 20 eV范围内以1 eV间隔生成的。它们表现出强烈的能量依赖性,在10 eV时最大值分别为3.7±0.8、3.5±0.6、45.4±4.1、2.9±1.1、5.1±1.4和54.0±16.4×10 cm。DSB、NDCD和交联的ACS清楚地表明,单个LEE可产生威胁细胞功能和遗传稳定性的损伤。在5 eV和10 eV时,总损伤ACS分别比先前针对与精氨酸(一种保护DNA的组蛋白成分)结合的相同质粒所确定的ACS大63%和80%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/4d1b0da5e630/ijms-26-04057-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/3c63ec14e65e/ijms-26-04057-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/b7d857ddd622/ijms-26-04057-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/4d1b0da5e630/ijms-26-04057-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/3c63ec14e65e/ijms-26-04057-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/b7d857ddd622/ijms-26-04057-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a0e/12072190/4d1b0da5e630/ijms-26-04057-g003.jpg

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