Surrow Jeppe H, Thomsen Simon T, Kumar Rakesh R, Far Brusatori Mónica, Montes Maria Paula, Palsole Ahan S, Hoede Chris, Klein Holger N, Volet Nicolas
Opt Express. 2025 Mar 10;33(5):11863-11875. doi: 10.1364/OE.544372.
A standard method to reduce the linewidth of semiconductor lasers involves the use of external optical feedback (EOF). However, feedback powers less than 1 % usually trigger coherence collapse (CC), leading to chaotic laser dynamics and linewidth broadening. This paper explores a method to mitigate CC through precise tuning of the feedback polarization depending on the feedback power. We report a semiconductor laser with a sub-100 Hz intrinsic linewidth, achieved via EOF. The laser features a U-shaped cavity with two sampled grating distributed Bragg reflectors (SG-DBRs), enabling broad tunability across a 42 nm wavelength range (1513-1555 nm). By injecting optical feedback into both sides of the laser cavity via an external fiber-based cavity, we reduce the intrinsic linewidth by more than three orders of magnitude, from MHz to sub-kHz across the laser's tuning range. By dynamically tuning the polarization, we demonstrate sub-100 Hz intrinsic linewidths at feedback powers up to 10 %, marking an improvement over prior studies where CC limited performance.
一种降低半导体激光器线宽的标准方法是使用外部光反馈(EOF)。然而,小于1%的反馈功率通常会引发相干崩溃(CC),导致激光动力学混沌和线宽展宽。本文探索了一种根据反馈功率精确调整反馈偏振来减轻CC的方法。我们报道了一种通过EOF实现本征线宽低于100 Hz的半导体激光器。该激光器具有一个带有两个采样光栅分布布拉格反射器(SG-DBR)的U形腔,能够在42 nm波长范围(1513 - 1555 nm)内实现宽调谐。通过基于外部光纤腔向激光腔两侧注入光反馈,我们在激光器的调谐范围内将本征线宽从兆赫兹降低了三个多数量级至亚千赫兹。通过动态调整偏振,我们在高达10%的反馈功率下展示了低于100 Hz的本征线宽,这标志着相对于CC限制性能的先前研究有了改进。