Liu Rong, Liu Yu, Li Xiao-Ping, Wang Lei, Li Fengyu, Chen Zhongfang
Research Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials at Universities of Inner Mongolia Autonomous Region, Inner Mongolia University, Hohhot 010021, China.
J Phys Chem Lett. 2025 Aug 28;16(34):8690-8696. doi: 10.1021/acs.jpclett.5c01818. Epub 2025 Aug 18.
Inspired by the rich physics of honeycomb-kagome (HK) lattices and flat-band magnetism, we predict a stable two-dimensional (2D) penta-AgN monolayer through comprehensive tight-binding (TB) model analysis and first-principles calculations. This novel material integrates pentagonal AgN building blocks into an effective HK superstructure, exhibiting a unique planar hexagonal geometry with hypercoordinated Ag atoms. We demonstrate that penta-AgN is intrinsically a bipolar magnetic semiconductor (BMS) and, more notably, a magnetic real Chern insulator (MRCI) protected by symmetry, featuring spin-polarized flat bands near the Fermi level, intrinsic in-plane ferromagnetic ordering, and observable corner states. A key finding is the exceptional strain-tunability of these flat bands, which allows for precise engineering of its electronic and topological properties. Under biaxial strain, penta-AgN undergoes transitions from a BMS to a half-semiconductor (HSC) and subsequently to a half-metal (HM). Concurrently, its topological properties evolve transition from an MRCI to a double-Weyl metal phase, featuring quadratically dispersing Weyl points characterized by a Chern number of || = 1. The predicted thermodynamic, dynamic, mechanical, and thermal stability, combined with advances in synthesizing nitrogen chains and metal nitrides, suggests high feasibility for experimental realization. This work not only introduces a new member to the penta-structured 2D material family with unprecedented planar Ag hypercoordination but also offers a versatile platform for developing multifunctional spintronic devices leveraging strain-modulated topological states.
受蜂窝 - Kagome(HK)晶格丰富物理性质和平带磁性的启发,我们通过全面的紧束缚(TB)模型分析和第一性原理计算,预测了一种稳定的二维(2D)五边形AgN单层材料。这种新型材料将五边形AgN结构单元整合到一个有效的HK超结构中,展现出具有高配位Ag原子的独特平面六边形几何结构。我们证明五边形AgN本质上是一种双极磁半导体(BMS),更值得注意的是,它是一种受对称性保护的磁实陈绝缘体(MRCI),在费米能级附近具有自旋极化平带、本征面内铁磁序以及可观测的角态。一个关键发现是这些平带具有特殊的应变可调性,这使得能够精确调控其电子和拓扑性质。在双轴应变下,五边形AgN会从BMS转变为半半导体(HSC),随后转变为半金属(HM)。同时,其拓扑性质从MRCI演变为双外尔金属相,具有由陈数|| = 1表征的二次色散外尔点。预测的热力学、动力学、力学和热稳定性,以及在合成氮链和金属氮化物方面的进展,表明其实验实现具有很高的可行性。这项工作不仅为具有前所未有的平面Ag高配位的五边形结构二维材料家族引入了新成员,还为利用应变调制拓扑态开发多功能自旋电子器件提供了一个通用平台。