Zhang Ke, Zhou Daming, Gao Ningfei, Zhang Jiahao, Tong Zhongzhen, Zhao Jibo, Liu Peng, Wang Xinhe, Lin Xiaoyang, Xu Haitao, Peng Lian-Mao, Zhao Weisheng
School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China.
Sci Adv. 2025 Aug 22;11(34):eadw0024. doi: 10.1126/sciadv.adw0024.
Silicon-based integrated circuits operating in radiation environments require additional and complex hardening configurations, leading to performance lags compared to the International Roadmap for Devices and Systems. Carbon nanotubes (CNTs), with their ultrastrong chemical bonds and nanoscale dimensions, offer substantial potential for high-performance, radiation-tolerant electronics. However, the challenges associated with radiation-tolerant fabrication processes have hindered the development of macroelectronics using complementary CNT transistors (CNTFETs). In this study, we successfully fabricated radiation-tolerant, highly symmetric, and uniform CMOS building blocks, implementing various logic gates (inverters, NAND, and XOR gates) and ring oscillators (ROs) with 5, 11, and 501 stages. After irradiation up to 6 Mrad(Si), all devices maintained rail-to-rail outputs, and notably, the 501-stage RO, comprising 1004 CNTFETs, showed minimal delay variation (10.3 ± 0.8 ns). This work demonstrates the radiation-tolerant of large-scale CNTFETs, paving the way for their potential replacement of silicon-based FETs in radiation-heavy environments.
在辐射环境中运行的硅基集成电路需要额外且复杂的加固配置，与《器件和系统国际路线图》相比会导致性能滞后。碳纳米管（CNT）凭借其超强的化学键和纳米级尺寸，在高性能、耐辐射电子学方面具有巨大潜力。然而，与耐辐射制造工艺相关的挑战阻碍了使用互补碳纳米管晶体管（CNTFET）的宏观电子学的发展。在本研究中，我们成功制造出了耐辐射、高度对称且均匀的CMOS构建模块，实现了各种逻辑门（反相器、与非门和异或门）以及具有5级、11级和501级的环形振荡器（RO）。在高达6兆拉德（硅）的辐照后，所有器件均保持轨到轨输出，值得注意的是，由1004个CNTFET组成的501级RO显示出最小的延迟变化（10.3±0.8纳秒）。这项工作证明了大规模CNTFET的耐辐射性，为其在高辐射环境中潜在替代硅基FET铺平了道路。
