Kubitschek H E
J Bacteriol. 1980 May;142(2):724-5. doi: 10.1128/jb.142.2.724-725.1980.
Double mutations to azide resistance and to bacteriophage T5 resistance of genes separated by more than 50 kilobases were induced in Escherichia coli WP2s in chemostat cultures by exposure to a single low dose of ultraviolet light. Frequencies of induced double mutations were three orders of magnitude greater than would be predicted by chance. Reversions from azide resistance and phage resistance occurred independently, showing that that the double mutation was not due to pleiotropic effects of a single gene mutation. These results support earlier findings which show that low doses of ultraviolet light induce multiple gene mutations in Bacillus subtilis over a similarly broad range.
通过暴露于单一低剂量紫外线,在恒化器培养的大肠杆菌WP2s中诱导了对叠氮化物抗性和对噬菌体T5抗性的双突变,这些基因之间的距离超过50千碱基。诱导双突变的频率比随机预测的高三个数量级。叠氮化物抗性和噬菌体抗性的回复突变是独立发生的,这表明双突变不是由于单个基因突变的多效性效应。这些结果支持了早期的发现,即低剂量紫外线在类似的广泛范围内诱导枯草芽孢杆菌中的多个基因突变。