Shirazi A, Liu K, Trott K R
Department of Radiation Biology, St. Bartholomew's Medical College, London, United Kingdom.
Radiat Res. 1996 Jun;145(6):768-75.
Based on the hypothesis that acceleration of repopulation in skin during fractionated irradiation is triggered by an inflammatory response of the dermis to radiation-induced epidermal hypoplasia, we produced a mild erythema by exposure to UVB radiation before applying different X-irradiation schedules. At different times ranging from 6 h to 14 days after a single exposure to UVB radiation which caused a distinct erythema, a 2-cm skin field on the legs of mice was irradiated with either different single doses or five daily fractions of 3 Gy followed by different single top-up doses of 300 kV X rays. Skin reactions were scored daily for 4 weeks and the occurrence of moist desquamation was taken to construct dose-response curves and to calculate ED50 values. Five days after exposure to UVB radiation and later, radioresistance of epidermis to single and fractionated X irradiation was significantly increased. Results were analyzed using the linear-quadratic formalism to identify possible mechanisms for this UV-radiation-induced radioresistance. The data suggest that exposure to UVB radiation led to a gradual increase in the number of epidermal stem cells and their repopulation rate.
基于分次照射期间皮肤再增殖加速是由真皮对辐射诱导的表皮发育不全的炎症反应所触发这一假设,我们在应用不同的X射线照射方案之前,通过暴露于UVB辐射产生了轻度红斑。在单次暴露于UVB辐射导致明显红斑后的6小时至14天的不同时间,用不同的单次剂量或5次每日3 Gy的分次剂量照射小鼠腿部2 cm的皮肤区域,随后给予不同的300 kV X射线单次补充剂量。对皮肤反应进行了4周的每日评分,并以湿性脱屑的发生情况构建剂量反应曲线并计算ED50值。暴露于UVB辐射5天后及之后,表皮对单次和分次X射线照射的放射抗性显著增加。使用线性二次模型分析结果,以确定这种UV辐射诱导的放射抗性的可能机制。数据表明,暴露于UVB辐射导致表皮干细胞数量及其再增殖率逐渐增加。