Castillo C, Piernavieja C, Recio-Pinto E
Instituto de Estudios Avanzados (IDEA), Caracas, Venezuela.
Brain Res. 1996 Sep 16;733(2):231-42. doi: 10.1016/0006-8993(96)00566-5.
Anemone toxin II (ATX)-modified voltage-dependent neuronal sodium channels were studied in planar lipid bilayers. ATX-modified channels displayed two predominant conducting states: a short-lived (ms-s) high-conductance (approximately 65 pS) state and a long-lived (s-min) low-conductance (approximately 10 pS) state. The high-conductance state underwent brief closures (ms) and the low-conductance state underwent long closures (s). The probability of detecting these states was time- and voltage-dependent. The channel's fractional open time (fo) due to the high-conductance state increased with depolarization and had a midpoint potential (Va) of -36 mV and an apparent gating charge (Za) of 2.8. The channel's fo due to the low-conductance state increased with depolarization and had a Va of +13 mV and a Za of 1.4. At positive potentials, ATX-modified channels slowly (minutes) entered an absorbing non-conducting state. The permeability ratio of Na+/K+ was 2 and 4 for the low- and high-conductance states, respectively. The saxitoxin analog C3 blocked ATX-modified sodium channels with high affinity (Kd(60-90 mV) = 410 nM, 0.5 M NaCl). The data suggest that upon a depolarization step, ATX-modified channels enter rapidly (ms) into a high-conductance state and more slowly (s-min) into a low-conductance state. Also as the membrane potential becomes more positive, the equilibrium is shifted from the high- to the low-conductance state and from the conducting states to an absorbing non-conducting state.
在平面脂质双分子层中研究了海葵毒素II(ATX)修饰的电压依赖性神经元钠通道。ATX修饰的通道表现出两种主要的导通状态:一种是短暂存在(毫秒至秒)的高电导(约65 pS)状态,另一种是长期存在(秒至分钟)的低电导(约10 pS)状态。高电导状态经历短暂关闭(毫秒),低电导状态经历长时间关闭(秒)。检测到这些状态的概率与时间和电压有关。由于高电导状态导致的通道分数开放时间(fo)随去极化增加,中点电位(Va)为-36 mV,表观门控电荷(Za)为2.8。由于低电导状态导致的通道fo随去极化增加,Va为+13 mV,Za为1.4。在正电位下,ATX修饰的通道缓慢(数分钟)进入一种吸收性非导通状态。低电导和高电导状态下Na+/K+的渗透率比分别为2和4。石房蛤毒素类似物C3以高亲和力阻断ATX修饰的钠通道(Kd(60 - 90 mV) = 410 nM,0.5 M NaCl)。数据表明,在去极化步骤中,ATX修饰的通道迅速(毫秒)进入高电导状态,更缓慢(秒至分钟)进入低电导状态。而且随着膜电位变得更正,平衡从高电导状态向低电导状态转移,从导通状态向吸收性非导通状态转移。