• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

Time-resolved exciton transfer in GaAs/AlxGa1-xAs double-quantum-well structures.

作者信息

Ferreira R, Rolland P, Roussignol P, Delalande C, Vinattieri A, Carraresi L, Colocci M, Roy N, Sermage B, Palmier JF, Etienne B

出版信息

Phys Rev B Condens Matter. 1992 May 15;45(20):11782-11794. doi: 10.1103/physrevb.45.11782.

DOI:10.1103/physrevb.45.11782
PMID:10001193
Abstract
摘要

相似文献

1
Time-resolved exciton transfer in GaAs/AlxGa1-xAs double-quantum-well structures.砷化镓/铝镓砷双量子阱结构中的时间分辨激子转移
Phys Rev B Condens Matter. 1992 May 15;45(20):11782-11794. doi: 10.1103/physrevb.45.11782.
2
Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots.GaAs/AlxGa1-xAs量子线和量子点中发光效率、激子转移和激子局域化的温度依赖性
Phys Rev B Condens Matter. 1995 May 15;51(19):13303-13314. doi: 10.1103/physrevb.51.13303.
3
Magnetophotoluminescence measurement of the formation time of an exciton in AlxGa1-xAs/GaAs quantum-well structures.AlxGa1-xAs/GaAs量子阱结构中激子形成时间的磁光致发光测量。
Phys Rev B Condens Matter. 1995 Dec 15;52(23):16353-16356. doi: 10.1103/physrevb.52.16353.
4
Exciton binding energies and oscillator strengths in a symmetric AlxGa1-xAs/GaAs double quantum well.
Phys Rev B Condens Matter. 1994 Mar 15;49(12):8487-8490. doi: 10.1103/physrevb.49.8487.
5
Optical investigation of the exciton transfer between growth islands of different well widths in GaAs/AlxGa1-xAs quantum wells.对GaAs/AlxGa1-xAs量子阱中不同阱宽生长岛之间激子转移的光学研究。
Phys Rev B Condens Matter. 1989 Apr 15;39(11):7736-7743. doi: 10.1103/physrevb.39.7736.
6
Optical second-order susceptibility of GaAs/AlxGa1-xAs asymmetric coupled-quantum-well structures in the exciton region.激子区域中GaAs/AlxGa1-xAs非对称耦合量子阱结构的光学二阶极化率
Phys Rev B Condens Matter. 1991 May 15;43(15):12477-12479. doi: 10.1103/physrevb.43.12477.
7
Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells.砷化镓-铝镓砷多量子阱中束缚态与连续态之间激子转移的动力学
Phys Rev B Condens Matter. 1990 Jun 15;41(18):12949-12952. doi: 10.1103/physrevb.41.12949.
8
Electron-assisted exciton transfer and long-lived electrons and holes in GaAs/AlxGa1-xAs quantum wells.GaAs/AlxGa1-xAs量子阱中的电子辅助激子转移以及长寿命电子和空穴
Phys Rev B Condens Matter. 1996 Sep 15;54(12):8728-8736. doi: 10.1103/physrevb.54.8728.
9
Observation of GaAs--AlxGa1--xAs heterostructures and quantum-well-wire structures using backscattered electron image.
J Electron Microsc Tech. 1989 May;12(1):60-4. doi: 10.1002/jemt.1060120108.
10
Correlation between the light- and heavy-hole free-exciton fine structure in AlxGa1-xAs-GaAs multiple-quantum-well structures using photoluminescence excitation spectroscopy.利用光致发光激发光谱法研究AlxGa1-xAs-GaAs多量子阱结构中轻空穴和重空穴自由激子精细结构之间的相关性
Phys Rev B Condens Matter. 1988 Apr 15;37(12):7133-7136. doi: 10.1103/physrevb.37.7133.