增强薄型砷化镓/铝镓砷量子阱中电子-空穴对的迁移率。 - Suppr

Enhancement of electron-hole pair mobilities in thin GaAs/AlxGa1-xAs quantum wells.

Hillmer H, Forchel A, Tu CW

Phys Rev B Condens Matter. 1992 Jan 15;45(3):1240-1245. doi: 10.1103/physrevb.45.1240.

Abstract

摘要

Phys Rev B Condens Matter. 1992 Jan 15;45(3):1240-1245. doi: 10.1103/physrevb.45.1240.

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