Choi Y B, Lipton S A
Cerebrovascular and NeuroScience Research Institute, Brigham and Women's Hospital, Harvard Medical School, Boston, Massachusetts 02115, USA.
Neuron. 1999 May;23(1):171-80. doi: 10.1016/s0896-6273(00)80763-1.
Zinc (Zn2+) inhibition of N-methyl-D-aspartate receptor (NMDAR) activity involves both voltage-independent and voltage-dependent components. Recombinant NR1/NR2A and NR1/NR2B receptors exhibit similar voltage-dependent block, but voltage-independent Zn2+ inhibition occurs with much higher affinity for NR1/NR2A than NR1/NR2B receptors (nanomolar versus micromolar IC50, respectively). Here, we show that two neighboring histidine residues on NR2A represent the critical determinant (termed the "short spacer") for high-affinity, voltage-independent Zn2+ inhibition using the Xenopus oocyte expression system and site-directed mutagenesis. Mutation of either one of these two histidine residues (H42 and H44) in the extracellular N-terminal domain of NR2A shifted the IC50 for high-affinity Zn2+ inhibition approximately 200-fold without affecting the EC50 of the coagonists NMDA and glycine. We suggest that the mechanism of high-affinity Zn2+ inhibition on the NMDAR involves enhancement of proton inhibition.
锌离子(Zn2+)对N-甲基-D-天冬氨酸受体(NMDAR)活性的抑制作用涉及电压非依赖性和电压依赖性成分。重组NR1/NR2A和NR1/NR2B受体表现出相似的电压依赖性阻断,但电压非依赖性Zn2+抑制对NR1/NR2A的亲和力远高于NR1/NR2B受体(分别为纳摩尔级和微摩尔级IC50)。在此,我们利用非洲爪蟾卵母细胞表达系统和定点诱变表明,NR2A上两个相邻的组氨酸残基代表了高亲和力、电压非依赖性Zn2+抑制的关键决定因素(称为“短间隔区”)。NR2A细胞外N端结构域中这两个组氨酸残基(H42和H44)中的任何一个发生突变,都会使高亲和力Zn2+抑制的IC50改变约200倍,而不影响共激动剂NMDA和甘氨酸的EC50。我们认为,NMDAR上高亲和力Zn2+抑制的机制涉及质子抑制的增强。