Gil Z, Silberberg S D, Magleby K L
Department of Life Sciences, The Zlotowski Center for Neuroscience, Ben-Gurion University of the Negev, Beer Sheva 84105, Israel.
Proc Natl Acad Sci U S A. 1999 Dec 7;96(25):14594-9. doi: 10.1073/pnas.96.25.14594.
The patch-clamp technique allows currents to be recorded through single ion channels in patches of cell membrane in the tips of glass pipettes. When recording, voltage is typically applied across the membrane patch to drive ions through open channels and to probe the voltage-sensitivity of channel activity. In this study, we used video microscopy and single-channel recording to show that prolonged depolarization of a membrane patch in borosilicate pipettes results in delayed slow displacement of the membrane into the pipette and that this displacement is associated with the activation of mechanosensitive (MS) channels in the same patch. The membrane displacement, approximately 1 micrometer with each prolonged depolarization, occurs after variable delays ranging from tens of milliseconds to many seconds and is correlated in time with activation of MS channels. Increasing the voltage step shortens both the delay to membrane displacement and the delay to activation. Preventing depolarization-induced membrane displacement by applying positive pressure to the shank of the pipette or by coating the tips of the borosilicate pipettes with soft glass prevents the depolarization-induced activation of MS channels. The correlation between depolarization-induced membrane displacement and activation of MS channels indicates that the membrane displacement is associated with sufficient membrane tension to activate MS channels. Because membrane tension can modulate the activity of various ligand and voltage-activated ion channels as well as some transporters, an apparent voltage dependence of a channel or transporter in a membrane patch in a borosilicate pipette may result from voltage-induced tension rather than from direct modulation by voltage.
膜片钳技术能够记录通过玻璃微电极尖端细胞膜片上单个离子通道的电流。记录时,通常在膜片上施加电压,以驱动离子通过开放通道,并探测通道活性的电压敏感性。在本研究中,我们使用视频显微镜和单通道记录来表明,硼硅酸盐微电极中膜片的长时间去极化会导致膜向微电极内延迟缓慢位移,并且这种位移与同一膜片中机械敏感(MS)通道的激活相关。每次长时间去极化时,膜位移约为1微米,在从几十毫秒到几秒不等的可变延迟后发生,并且在时间上与MS通道的激活相关。增加电压阶跃会缩短膜位移延迟和激活延迟。通过向微电极柄施加正压或用软玻璃涂覆硼硅酸盐微电极尖端来防止去极化诱导的膜位移,可防止去极化诱导的MS通道激活。去极化诱导的膜位移与MS通道激活之间的相关性表明,膜位移与足以激活MS通道的膜张力相关。由于膜张力可以调节各种配体门控和电压门控离子通道以及一些转运体的活性,硼硅酸盐微电极中膜片中通道或转运体明显的电压依赖性可能是由电压诱导的张力引起的,而不是由电压直接调节引起的。