Ritter S, Nasonova E, Gudowska-Nowak E, Scholz M, Kraft G
Gesellschaft für Schwerionenforschung, Darmstadt, Germany.
Int J Radiat Biol. 2000 Feb;76(2):149-61. doi: 10.1080/095530000138808.
As an extension of previous studies, the time-course of high-LET-induced chromosomal damage was investigated in first- and second-cycle V79 Chinese hamster cells.
Cells were exposed in G1 to 10.4 MeV/u Ar ions (LET = 1226 keV/microm) and chromosomal damage was measured at 2h sampling intervals between 10 h and 34 h after irradiation. To distinguish between cells in different post-irradiation cycles, the fluorescence-plus-Giemsa technique was applied.
For first- and second-generation cells, the number of aberrant metaphases and aberrations per metaphase were found to increase markedly with sampling time, demonstrating that cell cycle progression was delayed according to the number of lesions carried by the cell. To account for the time-dependent expression of chromosomal damage a mathematical approach was used based on the integrated flux of aberrant cells entering mitosis. Moreover, the analysis of Ar ion-induced chromosome lesions confirmed that high-LET radiation results in specific changes in the spectrum of aberration types. In particular, an increased rate of chromatid-type aberrations as well as a high frequency of chromosomal breaks was found, although the cells were exposed in G1.
Due to the fact that cells collected at one sampling time are not representative of the entire population, the complete time-course of chromosomal damage has to be taken into account for the determination of a meaningful RBE value. Otherwise, the analysis of chromosomal damage can result in a pronounced over- or underestimation of the RBE depending on the subpopulation of cells entering mitosis at that particular sampling time.
作为先前研究的扩展,在第一代和第二代V79中国仓鼠细胞中研究了高传能线密度(LET)诱导的染色体损伤的时间进程。
细胞在G1期暴露于10.4 MeV/u的氩离子(LET = 1226 keV/μm),并在照射后10小时至34小时之间以2小时的采样间隔测量染色体损伤。为了区分处于不同照射后周期的细胞,应用了荧光加吉姆萨技术。
对于第一代和第二代细胞,发现异常中期的数量和每个中期的畸变数量随采样时间显著增加,表明细胞周期进程根据细胞携带的损伤数量而延迟。为了解释染色体损伤的时间依赖性表达,基于进入有丝分裂的异常细胞的积分通量采用了一种数学方法。此外,对氩离子诱导的染色体损伤的分析证实,高LET辐射导致畸变类型谱的特定变化。特别是,发现染色单体型畸变率增加以及染色体断裂频率很高,尽管细胞是在G1期暴露的。
由于在一个采样时间收集的细胞不能代表整个群体,在确定有意义的相对生物学效应(RBE)值时必须考虑染色体损伤的完整时间进程。否则,根据在该特定采样时间进入有丝分裂的细胞亚群,染色体损伤分析可能会导致对RBE的明显高估或低估。