Takahashi H, Kim J I, Min H J, Sato K, Swartz K J, Shimada I
Graduate School of Pharmaceutical Sciences, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan.
J Mol Biol. 2000 Mar 31;297(3):771-80. doi: 10.1006/jmbi.2000.3609.
The three-dimensional structure of hanatoxin1 (HaTx1) was determined by using NMR spectroscopy. HaTx1 is a 35 amino acid residue peptide toxin that inhibits the drk1 voltage-gated K(+) channel not by blocking the pore, but by altering the energetics of gating. Both the amino acid sequence of HaTx1 and its unique mechanism of action distinguish this toxin from the previously described K(+) channel inhibitors. Unlike most other K(+) channel-blocking toxins, HaTx1 adopts an "inhibitor cystine knot" motif and is composed of two beta-strands, strand I for residues 19-21 and strand II for residues 28-30, connected by four chain reversals. A comparison of the surface features of HaTx1 with those of other gating modifier toxins of voltage-gated Ca(2+) and Na(+) channels suggests that the combination of a hydrophobic patch and surrounding charged residues is principally responsible for the binding of gating modifier toxins to voltage-gated ion channels.
通过核磁共振光谱法测定了汉那毒素1(HaTx1)的三维结构。HaTx1是一种由35个氨基酸残基组成的肽毒素,它抑制drk1电压门控钾通道并非通过堵塞孔道,而是通过改变门控的能量学。HaTx1的氨基酸序列及其独特的作用机制使其有别于先前描述的钾通道抑制剂。与大多数其他钾通道阻断毒素不同,HaTx1采用“抑制剂胱氨酸结”基序,由两条β链组成,第19 - 21位残基的链I和第28 - 30位残基的链II,通过四个链回折相连。将HaTx1的表面特征与电压门控钙通道和钠通道的其他门控修饰毒素的表面特征进行比较表明,疏水斑块和周围带电残基的组合主要负责门控修饰毒素与电压门控离子通道的结合。