视觉工作记忆任务期间手机发射的电磁场对脑电图的影响。
Effects of electromagnetic fields emitted by cellular phones on the electroencephalogram during a visual working memory task.
作者信息
Krause C M, Sillanmäki L, Koivisto M, Häggqvist A, Saarela C, Revonsuo A, Laine M, Hämäläinen H
机构信息
Laboratory of Computational Engineering, Helsinki University of Technology, Finland.
出版信息
Int J Radiat Biol. 2000 Dec;76(12):1659-67. doi: 10.1080/09553000050201154.
PURPOSE
To examine the effects of electromagnetic fields (EMF) emitted by cellular phones on the event-related desynchronization/synchronization (ERD/ERS) responses of the 4-6, 6-8, 8-10 and 10-12Hz EEG frequency bands during cognitive processing.
MATERIALS AND METHODS
Twenty-four subjects performed a visual sequential letter task (n-back task) with three different working memory load conditions: zero, one and two items. All subjects performed the memory task both with and without exposure to a digital 902 MHz EMF in counterbalanced order.
RESULTS
The presence of EMF altered the ERD/ERS responses in the 6-8 and 8-10 Hz frequency bands but only when examined as a function of memory load and depending also on whether the presented stimulus was a target or not.
CONCLUSIONS
The results suggest that the exposure to EMF modulates the responses of EEG oscillatory activity approximately 8 Hz specifically during cognitive processes.
目的
研究手机发出的电磁场（EMF）对认知加工过程中4 - 6Hz、6 - 8Hz、8 - 10Hz和10 - 12Hz脑电频段的事件相关去同步化/同步化（ERD/ERS）反应的影响。
材料与方法
24名受试者在三种不同工作记忆负荷条件下（零项、一项和两项）执行视觉序列字母任务（n - 回溯任务）。所有受试者以平衡顺序在暴露于902MHz数字电磁场和未暴露于该电磁场两种情况下执行记忆任务。
结果
电磁场的存在改变了6 - 8Hz和8 - 10Hz频段的ERD/ERS反应，但仅在作为记忆负荷的函数进行检查时才会出现这种情况，并且还取决于呈现的刺激是否为目标。
结论
结果表明，暴露于电磁场会在认知过程中特别调节约8Hz的脑电振荡活动反应。
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