Andreev A V, Matveev K A
Department of Physics, University of Colorado, Boulder 80309, USA.
Phys Rev Lett. 2001 Jan 8;86(2):280-3. doi: 10.1103/PhysRevLett.86.280.
We consider Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads. An analytic expression for the thermopower as a function of temperature T and the reflection amplitude r in the quantum point contact is obtained. Two regimes can be identified: T<<EC/r/2 and T>>EC/r/2, where EC is the charging energy of the dot. The former regime is characterized by a weak logarithmic dependence of the thermopower on the reflection coefficient, in the latter the thermopower is linear in the reflection coefficient /r/2 but depends on temperature only logarithmically.
我们研究了基于与其中一个引线强耦合的量子点的单电子晶体管热电系数的库仑阻塞振荡。得到了热电势作为温度(T)和量子点接触中反射幅度(r)的函数的解析表达式。可以确定两种情况：(T\ll E_C/|r|^2)和(T\gg E_C/|r|^2)，其中(E_C)是量子点的充电能量。前一种情况的特征是热电势对反射系数的对数依赖性较弱，后一种情况下热电势与反射系数(|r|^2)呈线性关系，但仅对数依赖于温度。
Zotero 插件