Butko V Y, Adams P W
Department of Physics and Astronomy, Louisiana State University, Baton Rouge 70803, USA.
Nature. 2001 Jan 11;409(6817):161-4. doi: 10.1038/35051516.
One of the most far-reaching problems in condensed-matter physics is to understand how interactions between electrons, and the resulting correlations, affect the electronic properties of disordered two-dimensional systems. Extensive experimental and theoretical studies have shown that interaction effects are enhanced by disorder, and that this generally results in a depletion of the density of electronic states. In the limit of strong disorder, this depletion takes the form of a complete gap in the density of states. It is known that this 'Coulomb gap' can turn a pure metal film that is highly disordered into a poorly conducting insulator, but the properties of these insulators are not well understood. Here we investigate the electronic properties of disordered beryllium films, with the aim of disentangling the effects of the Coulomb gap and the underlying disorder. We show that the gap is suppressed by a magnetic field and that this drives the strongly insulating beryllium films into a low-temperature 'quantum metal' phase with resistance near the quantum resistance RQ = h/e2, where h is Planck's constant and e is the electron charge.
凝聚态物理中最具深远影响的问题之一是理解电子之间的相互作用以及由此产生的关联如何影响无序二维系统的电子性质。广泛的实验和理论研究表明,无序会增强相互作用效应,而这通常会导致电子态密度的耗尽。在强无序极限下,这种耗尽表现为态密度中的一个完全能隙。已知这种“库仑能隙”能将高度无序的纯金属薄膜转变为导电性很差的绝缘体,但这些绝缘体的性质尚未得到很好的理解。在此,我们研究无序铍薄膜的电子性质,旨在厘清库仑能隙和潜在无序的影响。我们表明,磁场会抑制能隙,并且这会将强绝缘的铍薄膜驱动到一个低温“量子金属”相,其电阻接近量子电阻RQ = h/e²,其中h是普朗克常数,e是电子电荷。