Kempa K, Gornik E, Unterrainer K, Kast M, Strasser G
Department of Physics, Boston College, Chestnut Hill, MA 02467-3811, USA.
Phys Rev Lett. 2001 Mar 26;86(13):2850-3. doi: 10.1103/PhysRevLett.86.2850.
We study tunneling through resonant tunneling diodes (RTD) with very long emitter drift regions (up to 2 microm). In such diodes, charge accumulation occurs near the double barrier on the emitter side, in a self-induced potential pocket. This leads to a substantial enhancement of the wave function overlap between states of the pocket and the RTD, and, consequently, to increased off-resonant current mediated by various scattering processes. For RTD with the longest drift region (2 microm), an additional strong current peak is observed between the first and the second resonant peaks. We attribute this pronounced feature to the intersubband transitions mediated by resonant emission of intersubband plasmons.
我们研究了具有很长发射极漂移区（长达2微米）的共振隧穿二极管（RTD）中的隧穿现象。在这种二极管中，电荷在发射极一侧的双势垒附近、一个自感应势阱中积累。这导致势阱态与RTD态之间的波函数重叠大幅增强，进而导致由各种散射过程介导的非共振电流增加。对于具有最长漂移区（2微米）的RTD，在第一和第二共振峰之间观察到一个额外的强电流峰。我们将这一显著特征归因于子带间等离子体激元的共振发射介导的子带间跃迁。
