Balents L, Radzihovsky L
Physics Department, University of California, Santa Barbara, 93106, USA.
Phys Rev Lett. 2001 Feb 26;86(9):1825-8. doi: 10.1103/PhysRevLett.86.1825.
We show that the interlayer tunneling I-V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder, and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a "derivative" feature at V(B)(B(parallel)) = 2 pi Planck's over 2 pi upsilon B(parallel)d/e phi(0), which gives a direct measurement of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.
我们表明，双层量子霍尔态中的层间隧穿电流-电压（I-V）呈现出丰富的行为，这取决于样品尺寸、电压长度尺度、电流屏蔽、无序和热长度的相对大小。对于弱隧穿，我们预测幂律形状的负微分电导会转变为尖锐的零偏置峰。面内磁场会分裂这个零偏置峰，取而代之的是在V(B)(B(平行)) = 2π普朗克常数 / (2πυB(平行)d/eφ(0))处出现一个“导数”特征，这直接测量了与双层霍尔态自发对称性破缺相对应的戈德斯通模的色散。
