Solomon G S, Pelton M, Yamamoto Y
Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085, USA.
Phys Rev Lett. 2001 Apr 23;86(17):3903-6. doi: 10.1103/PhysRevLett.86.3903.
The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
