D(3)SiF的高分辨率红外和毫米波研究：(29)Si和(30)Si同位素的基态及v(3)=1态，以及D(3)(28)SiF的v(3)=v(6)=1和v(3)=2态

High-Resolution Infrared and Millimeter-Wave Study of D(3)SiF: The Ground and v(3)=1 States of the (29)Si and (30)Si Species, and the v(3)=v(6)=1 and v(3)=2 States of D(3) (28)SiF.

作者信息

Sari-Zizi N. Ben, Najib H., Demaison J., Margulès L., Kisiel Z., Tretyakov M. Yu., MKadmi E. B., Bürger H.

机构信息

Laboratoire de Spectronomie Physique Appliquée, Faculté des Sciences, Université Mohammed V Agdal, Rabat, BP 1014, Morocco

出版信息

J Mol Spectrosc. 2001 Jul;208(1):101-109. doi: 10.1006/jmsp.2001.8361.

DOI:10.1006/jmsp.2001.8361

PMID:11437558

Abstract

The nu(3) band of D(3)SiF near 890 cm(-1) recorded with a resolution of 2.4x10(-3) cm(-1) has been explored for the (29)Si and (30)Si isotopic species. Moreover, the nu(3)+nu(6)-nu(6) and 2nu(3)-nu(3) bands for the main (28)Si isotopomer have been assigned. For this purpose the nu(3)+nu(6) and 2nu(3) bands at 1435.697 and 1769.531 cm(-1) have been studied. Ground state parameters of the (29)Si and (30)Si species have been determined by merging newly measured MMW frequencies and ground state combination differences. In addition, v(3)=1 excited state parameters for these species have been obtained. While for the (28)Si species the v(3)=v(6)=1 state is locally perturbed by levels of the v(2)+v(5)=2 polyad, the v(3)=2 state appears to be unperturbed, its parameters being predictable from those of the v(3)=1 state. Anharmonicity constants x(33)=-4.1334 cm(-1) and x(36)=-3.6547 cm(-1) have been determined. Copyright 2001 Academic Press.

摘要

已对890厘米⁻¹附近分辨率为2.4×10⁻³厘米⁻¹的D(3)SiF的ν(3)带进行了(²⁹)Si和(³⁰)Si同位素物种的研究。此外，还归属了主要(²⁸)Si同位素异构体的ν(3)+ν(6)-ν(6)和2ν(3)-ν(3)带。为此，研究了1435.697和1769.531厘米⁻¹处的ν(3)+ν(6)和2ν(3)带。通过合并新测量的毫米波频率和基态组合差值，确定了(²⁹)Si和(³⁰)Si物种的基态参数。此外，还获得了这些物种的v(3)=1激发态参数。对于(²⁸)Si物种，v(3)=v(6)=1态受到v(2)+v(5)=2多重态能级的局部微扰，而v(3)=2态似乎未受微扰，其参数可从v(3)=1态的参数预测得出。已确定非谐性常数x(33)= -4.1334厘米⁻¹和x(36)= -3.6547厘米⁻¹。版权所有2001年学术出版社。