Catti M
Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, 20125, Milano, Italy.
Phys Rev Lett. 2001 Jul 16;87(3):035504. doi: 10.1103/PhysRevLett.87.035504. Epub 2001 Jun 28.
The mechanism of the B3/B1 phase transition of SiC has been investigated by periodic LCAO-DFT least-enthalpy calculations. A new transformation pathway, based on a Pmm2 orthorhombic intermediate state with two SiC units per cell, is found to be energetically favored over the traditional R3m mechanism. The computed activation enthalpy is 0.75 eV/SiC unit at the predicted transition pressure of 92 GPa (B3LYP functional). Activation enthalpy and activation volume vs pressure are analyzed to characterize the kinetic aspects of the transformation.
通过周期性线性组合原子轨道密度泛函理论(LCAO-DFT)最小焓计算研究了碳化硅(SiC)的B3/B1相变机制。发现一种基于每个晶胞有两个SiC单元的Pmm2正交中间态的新转变途径,在能量上比传统的R3m机制更有利。在预测的92 GPa转变压力下(采用B3LYP泛函),计算得到的活化焓为0.75 eV/SiC单元。分析了活化焓和活化体积随压力的变化,以表征转变的动力学方面。