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透明导电氧化物Zn(k)In2O(k + 3)的结晶过程

Crystallization process of transparent conductive oxides Zn(k)In2O(k+3).

作者信息

Moriga T, Fukushima A, Tominari Y, Hosokawa S, Nakabayashi I, Tominaga K

机构信息

Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima, Japan.

出版信息

J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):785-7. doi: 10.1107/s0909049500018264.

DOI:10.1107/s0909049500018264
PMID:11512931
Abstract

Crystallization process of the homologous compounds Zn(k)In2O(k+3) from the coprecipitants was examined by XAFS spectroscopy and X ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remained amorphous. Subsequently bixbyite-type In2O3 appeared at 873K for k=5 and 7 and at below 773K for the other k-members, respectively. The InO distance in the amorphous In2O3 was a little shorted than that in the bixbyite-type In2O3 by 0.06-7A. The distance remained constant but abruptly increased to that observed in the bixbyite-type In2O3 in accordance with the progress of crystallization. Then the distance gradually decreased and converged to ca. 2.12A at the temperature range of 1173-1373K, due to the reaction between In2O3 and ZnO to form the homologous compound.

摘要

通过XAFS光谱和X射线衍射法研究了同源化合物Zn(k)In2O(k + 3)从共沉淀剂中的结晶过程。观察到了有趣的结晶行为。尽管氧化锌在573K时已结晶为纤锌矿型ZnO,但氧化铟仍保持非晶态。随后,对于k = 5和7,分别在873K时出现了方铁锰矿型In2O3,而对于其他k成员,则在773K以下出现。非晶态In2O3中的InO距离比方铁锰矿型In2O3中的InO距离短0.06 - 7Å。随着结晶过程的进行,该距离保持不变,但突然增加到方铁锰矿型In2O3中观察到的距离。然后,由于In2O3与ZnO反应形成同源化合物,该距离逐渐减小并在1173 - 1373K的温度范围内收敛至约2.12Å。

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