Shiue M Y, Sun Y C, Yang M H
Department of Nuclear Science, National Tsing-Hua University, Hsinchu, Taiwan.
Analyst. 2001 Aug;126(8):1449-52. doi: 10.1039/b102219i.
A method for the determination of the dopant concentration of tellurium in dissolved indium antimonide semiconductor material by electrothermal atomic absorption spectrometry (ETAAS) was developed. Efforts were made to investigate the optimal conditions of the furnace heating program and the effect of palladium modifier on the variation of tellurium and the background absorbance. According to the results obtained, the presence of palladium chemical modifier in the analysis of indium antimonide allowed the successful retention of tellurium in the graphite tube, and the optimum mass of palladium modifier was found to be dependent on the sample matrix concentration. The absorbance profile of tellurium and the background level were significantly improved when a pyrolysis temperature of 1100 degrees C and an atomization temperature of 2200 degrees C were employed in the optimized heating program. With the use of this method, a detection limit of 0.8 microg g(-1) tellurium in indium antimonide could be achieved. The applicability of the proposed method was evaluated by comparison with two independent methods, i.e. slurry sampling-ETAAS and ICP-MS. From the good agreement between the results, it was demonstrated that the proposed method is suitable for the determination of typical dopant concentrations of tellurium in indium antimonide.
开发了一种通过电热原子吸收光谱法（ETAAS）测定溶解的铟锑化物半导体材料中碲掺杂浓度的方法。研究了炉体加热程序的最佳条件以及钯改性剂对碲变化和背景吸光度的影响。根据所得结果，在铟锑化物分析中使用钯化学改性剂可使碲成功保留在石墨管中，并且发现钯改性剂的最佳质量取决于样品基质浓度。在优化的加热程序中采用1100℃的热解温度和2200℃的原子化温度时，碲的吸光度曲线和背景水平得到显著改善。使用该方法，铟锑化物中碲的检测限可达0.8 μg g⁻¹。通过与两种独立方法（即悬浮液进样-ETAAS和ICP-MS）比较，评估了所提出方法的适用性。结果之间的良好一致性表明，所提出的方法适用于测定铟锑化物中碲的典型掺杂浓度。
