Kuznetsov N V, Nymmik R A
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Russia.
Radiat Meas. 1996 Nov;26(6):959-65. doi: 10.1016/s1350-4487(96)00122-9.
The technique for evaluating the SEU rate induced by solar particle incidence on spacecraft microelectronics is described, including the contributions from the primary (heavy ion-induced) and secondary proton-induced) SEU mechanisms. The technique is based on original computational models for solar particle energy spectra and for SEU occurrence in electronics. The technique was used to analyze the data of the TDRS-1 Fairchild 93L422 IC exposed to protons and ions during the solar cosmic ray event of September-October 1989. The analysis included the distribution of the microcircuit shielding. A strong dependence of solar proton-to-ion ratio on the shielding thickness was indicated by the calculations.
描述了评估太阳粒子入射到航天器微电子设备上所引起的单粒子翻转率的技术,包括主要(重离子诱导)和次级(质子诱导)单粒子翻转机制的贡献。该技术基于太阳粒子能谱和电子设备中单粒子翻转发生情况的原始计算模型。该技术用于分析1989年9月至10月太阳宇宙射线事件期间暴露于质子和离子的跟踪与数据中继卫星-1(TDRS-1)仙童93L422集成电路的数据。分析包括微电路屏蔽的分布。计算结果表明太阳质子与离子的比率对屏蔽厚度有很强的依赖性。