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高压下量子点中的近藤效应:普适性与标度律

Kondo effect in quantum dots at high voltage: universality and scaling.

作者信息

Rosch A, Kroha J, Wölfle P

机构信息

Institut für Theorie der Kondensierten Materie, Universität Karlsruhe, D-76128 Karlsruhe, Germany.

出版信息

Phys Rev Lett. 2001 Oct 8;87(15):156802. doi: 10.1103/PhysRevLett.87.156802. Epub 2001 Sep 24.

Abstract

We examine the properties of a dc-biased quantum dot in the Coulomb blockade regime. For voltages V that are large compared to the Kondo temperature T(K), the physics is governed by the scales V and gamma, where gamma approximately V/ln(2)(V/T(K)) is the nonequilibrium decoherence rate induced by the voltage-driven current. Based on scaling arguments, self-consistent perturbation theory, and perturbative renormalization group, we argue that due to the large gamma the system can be described by renormalized perturbation theory in 1/ln(V/T(K))<<1. However, in certain variants of the Kondo problem, two-channel Kondo physics is induced by a large voltage V.

摘要

我们研究了处于库仑阻塞区的直流偏置量子点的性质。对于与近藤温度T(K)相比很大的电压V,物理过程由V和γ尺度决定,其中γ≈V/ln(2)(V/T(K))是由电压驱动电流引起的非平衡退相干率。基于标度论证、自洽微扰理论和微扰重整化群,我们认为由于γ很大,该系统可以用1/ln(V/T(K))<<1时的重整化微扰理论来描述。然而,在近藤问题的某些变体中,大电压V会诱导出双通道近藤物理。

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