Sanvito S, Hill N A
Materials Department, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett. 2001 Dec 24;87(26):267202. doi: 10.1103/PhysRevLett.87.267202. Epub 2001 Dec 6.
We present a theoretical density functional study of the electronic, magnetic, and transport properties of digital ferromagnetic heterostructures, obtained by delta doping GaAs with Mn. In the absence of intrinsic donors these systems have a half metallic density of states, with an exchange interaction much stronger than that of a random alloy with the same Mn concentration. Our ab initio ballistic transport calculations show that the carriers at the Fermi energy are strongly confined within a few monolayers around the MnAs plane. This strong confinement is responsible for the large exchange coupling and the two-dimensional half metallic behavior.
我们展示了对通过用锰进行δ掺杂砷化镓获得的数字铁磁异质结构的电子、磁性和输运性质的理论密度泛函研究。在没有本征施主的情况下,这些系统具有半金属态密度,其交换相互作用比具有相同锰浓度的随机合金要强得多。我们的从头算弹道输运计算表明,费米能级处的载流子被强烈限制在砷化锰平面周围的几个单分子层内。这种强限制是导致大交换耦合和二维半金属行为的原因。