Tanaka Hidekazu, Zhang Jun, Kawai Tomoji
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
Phys Rev Lett. 2002 Jan 14;88(2):027204. doi: 10.1103/PhysRevLett.88.027204. Epub 2001 Dec 27.
We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide p-n junction. In this (La0.9Ba0.1)MnO(3)/Nb doped SrTiO3 p-n junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from +1.0 to +1.8 V. The magnetoresistance can also be modulated electrically.
我们报道了在金属氧化物p-n结的空穴掺杂锰氧化物中室温下双交换铁磁性的电调制。在这个(La0.9Ba0.1)MnO(3)/Nb掺杂的SrTiO3 p-n结中，结电阻的温度依赖性显示出金属-绝缘体转变，其对应于铁磁转变温度的温度，通过从+1.0 V增加到+1.8 V的偏置电压从290 K大幅调制到340 K。磁阻也可以被电调制。
