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短暂暴露于50赫兹、100微特斯拉的磁场中:对反应时间、准确性和识别记忆的影响。

Brief exposure to a 50 Hz, 100 microT magnetic field: effects on reaction time, accuracy, and recognition memory.

作者信息

Podd John, Abbott Jeana, Kazantzis Nikolaos, Rowland Al

机构信息

School of Psychology, Massey University, Palmerston North, New Zealand.

出版信息

Bioelectromagnetics. 2002 Apr;23(3):189-95. doi: 10.1002/bem.10004.

DOI:10.1002/bem.10004
PMID:11891748
Abstract

The present study investigated both the direct and delayed effects of a 50 Hz, 100 microT magnetic field on human performance. Eighty subjects completed a visual duration discrimination task, half being exposed to the field and the other half sham exposed. The delayed effects of this field were also examined in a recognition memory task that followed immediately upon completion of the discrimination task, Unlike our earlier studies, we were unable to find any effects of the field on reaction time and accuracy in the visual discrimination task. However, the field had a delayed effect on memory, producing a decrement in recognition accuracy. We conclude that after many years of experimentation, finding a set of magnetic field parameters and human performance measures that reliably yield magnetic field effects is proving elusive. Yet the large number of significant findings suggests that further research is warranted.

摘要

本研究调查了50赫兹、100微特斯拉磁场对人类表现的直接和延迟影响。80名受试者完成了一项视觉持续时间辨别任务,其中一半暴露于磁场中,另一半接受假暴露。在辨别任务完成后立即进行的一项再认记忆任务中,也检测了该磁场的延迟影响。与我们早期的研究不同,我们未能发现该磁场对视觉辨别任务中的反应时间和准确性有任何影响。然而,该磁场对记忆有延迟影响,导致再认准确性下降。我们得出结论,经过多年的实验,要找到一组能可靠产生磁场效应的磁场参数和人类表现测量方法仍然很难。然而,大量显著的研究结果表明值得进一步开展研究。

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