Inaba A, Yokota T, Otagiri A, Nishimura T, Saito Y, Kanouchi T, Mizusawa H
Department of Neurology, Tokyo Medical and Dental University, 5-45, Yushima 1-chome, Bunkyo-ku, Tokyo, Japan.
Clin Neurophysiol. 2002 Jun;113(6):925-9. doi: 10.1016/s1388-2457(02)00019-6.
It is often difficult to stimulate the proximal hypoglossal nerve by magnetic occipital stimulation, even in normal subjects. Therefore, we tested an improved method of stimulating the proximal hypoglossal nerve, using high voltage electrical stimulation.
The proximal hypoglossal nerve was activated by high voltage electrical stimulation using surface electrodes over the occipital skull. The compound muscle action potential (CMAP) was recorded from the lingual muscles using surface electrodes in 10 normal subjects. CMAP and F waves produced by distal hypoglossal nerve stimulation and motor evoked potentials produced by transcranial magnetic stimulation were also recorded.
When the anode electrode was placed at the mastoid process and the cathode below the inion, the unilateral proximal hypoglossal nerve was readily stimulated supramaximally in all the subjects. The CMAP latency was the same as that obtained with magnetic occipital stimulation. The central motor conduction time (CMCT) calculated from the proximal CMAP was 4.1+/-0.4 ms in the contralateral corticobulbar tract and 4.4+/-0.4 ms in the ipsilateral. The CMCT calculated from the minimal F wave latency was 3.3+/-0.2 ms.
The high voltage electrical stimulation is a useful method for stimulating the proximal hypoglossal nerve to estimate the CMCT of the corticobulbar tract.
即使在正常受试者中,通过枕部磁刺激来刺激舌下神经近端也常常很困难。因此,我们测试了一种使用高压电刺激来刺激舌下神经近端的改良方法。
使用枕骨表面电极通过高压电刺激激活舌下神经近端。在10名正常受试者中,使用表面电极从舌肌记录复合肌肉动作电位(CMAP)。还记录了由舌下神经远端刺激产生的CMAP和F波以及经颅磁刺激产生的运动诱发电位。
当阳极电极置于乳突,阴极置于枕外隆凸下方时,所有受试者的单侧舌下神经近端均能很容易地被超强刺激。CMAP潜伏期与枕部磁刺激获得的潜伏期相同。由近端CMAP计算得出的对侧皮质延髓束的中枢运动传导时间(CMCT)为4.1±0.4毫秒,同侧为4.4±0.4毫秒。由最小F波潜伏期计算得出的CMCT为3.3±0.2毫秒。
高压电刺激是一种用于刺激舌下神经近端以评估皮质延髓束CMCT的有用方法。