Zhitenev N B, Meng H, Bao Z
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA.
Phys Rev Lett. 2002 Jun 3;88(22):226801. doi: 10.1103/PhysRevLett.88.226801. Epub 2002 May 17.
A new method of fabricating small metal-molecule-metal junctions is developed, approaching the single-molecule limit. The conductance of different conjugated molecules in a broad temperature, source-drain, and gate voltage regime is reported. At low temperature, all investigated molecules display sharp conductance steps periodic in source-drain voltage. The position of these steps can be controlled by a gate potential. The spacing corresponds to the energy of the lowest molecular vibrations. These results show that the low-bias conductance of molecules is dominated by resonant tunneling through coupled electronic and vibration levels.
一种制造小型金属-分子-金属结的新方法被开发出来，已接近单分子极限。报道了在宽泛的温度、源漏电压和栅极电压范围内不同共轭分子的电导。在低温下，所有被研究的分子在源漏电压上都呈现出尖锐的、周期性的电导台阶。这些台阶的位置可以通过栅极电位来控制。其间距对应于最低分子振动的能量。这些结果表明，分子的低偏置电导主要由通过耦合电子和振动能级的共振隧穿主导。
